Electrical Properties in LB Films of Phenolic Polymer

페놀계 고분자의 LB막의 전기적 특성

Langmur-Blodgett (LB) method has a unique characteristic of making molecularly mutilayered aggregation structures. LB method makes the thickness of organic insulation layer controllable at molecular scale in various electronic devices. In this study, the organic materials applicable to crosslinked LB insulation layers of electronic devices have developed and the electrical properties of their LB films have examined such as Brewster angle microscopy(BAM), Scanning Maxwell-stress microscopy(SMM), and Current-voltage(1-V) properties.