Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Etching of Molybdenum by MERIE Metal Etcher

MERIE형 금속 식각기에 의한 몰리브덴 식각 연구

  • 김남훈 (중앙 대학교 전자전기공학부) ;
  • 김창일 (중앙 대학교 전자전기공학부) ;
  • 권광호 (한서대학교 전자공학과) ;
  • 김태형 (여주대학교 전긱학과) ;
  • 장의구 (중앙 대학교 전자전기공학부)
  • Published : 1999.05.01
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Abstract

In this study, molybdenum thin films were etched with the various Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$, photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS).

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