Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

New Oxide Crystals as Substrates for GaN-based Blue Light Emitting Devices

  • Fukuda, T. (Institute for Materials Research, Tohoku University) ;
  • Shimamura, K. (Institute for Materials Research, Tohoku University) ;
  • Tabata, H. (Institute for Materials Research, Tohoku University) ;
  • Takeda, H. (Institute for Materials Research, Tohoku University) ;
  • Futagawa, N. (Institute for Materials Research, Tohoku University) ;
  • Yoshikawa, A. (Institute for Materials Research, Tohoku University) ;
  • Kochurikhin, Vladimir-V. (Institute for Materials Research, Tohoku University)
  • Published : 1999.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

We have successfully grown <111>-oriented (La,Sr)(Al,Ta)$O_3$(LSAT) mixed-perovskite single crystals and <0001>-oriented $Ca_8La_2(PO_4)_6O_2$(CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they ar promising as new substrates for the growth of high quality GaN epitaxial layers.

Keywords