Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Development of Capacitance-type Humidity Sensors Using Porous Silicon Layer

다공질 실리콘층을 이용한 정전용량형 습도센서의 개발

  • Kim, Seong-Jeen (Sch. of Electrical and Electronics Eng., Kyungnam University) ;
  • Lee, Ju-Hyuk (Sch. of Electrical and Electronics Eng., Kyungnam University) ;
  • Yoon, Yeo-Kyung (Sch. of Electrical and Electronics Eng., Kyungnam University) ;
  • Choi, Bok-Gil (Dpt. of Electrical Eng., Kongju National University)
  • 김성진 (경남대학교 전기전자공학부) ;
  • 이주혁 (경남대학교 전기전자공학부) ;
  • 윤여경 (경남대학교 전기전자공학부) ;
  • 최복길 (공주대학교 전기공학과)
  • Published : 1998.11.28
Download PDF
⟨ Previous Next ⟩

Abstract

A capacitance-type humidity sensor using porous silicon layer is developed. The unique property of this sensor is a structure which has electrodes on the surface of the wafer like a general IC device. To do this. the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. The measurement of humidity-sensing ability was done for two type of sensors using porous silicon layer formed in 25 and 35% HF solutions, respectively. As the result, the former sensors showed larger value and variation of capacitance for the relative humidity.

Keywords