Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Analysis of single/poly crystalline Si etching characteristics using $Ar^+$ ion laser

$Ar^+$ ion laser를 이용한 단결정/다결정 Si 식각 특성 분석

  • Lee, Hyun-Ki (Department of Electricai Engineering, Korea University) ;
  • Park, Jung-Ho (Department of Electricai Engineering, Korea University) ;
  • Lee, Cheon (Department of Electrical Engineering, Inha University)
  • 이현기 (고려대학교 전기공학과) ;
  • 박정호 (고려대학교 전기공학과) ;
  • 이천 (인하대학교 전기공학과)
  • Published : 1998.11.28
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Abstract

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.

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