Study on characterization of hydrogenated carbon nitride thin films prebared by Plasma-Assisted Chemical Vapor Deposition

RF-PACVD를 이용한 Hydrogenated Carbon Nitride박막의 합성 및 특성에 관한 연구

Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using. RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate $C{\equiv}N$ stretching mode(nitrile), C-H stretching mode, C-H bending mode, C=C stretching mode C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD