대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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- Pages.729-731
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- 1998
소성공정에 의한 유리막과 Glass/Silicon 계면특성
Glass Film and Glass/Silicon Interface Properties by Firing Profiles
- Yoon, Se-Wook (Dept. of Electrical Engineering, IN-HA Univ.) ;
- Huh, Chang-Su (Dept. of Electrical Engineering, IN-HA Univ.)
- 발행 : 1998.11.28
초록
Surface passivation using glass powders results in good reliability for high voltage silicon power devices. In this paper, Zinc borosilicate glass was prepared for the purpose of passivating, and a deposition technique of glass films on the silicon surface by electrophoresis in which acetone is used as a suspension medium and a measurement technique of C-V curve has been investigated. Properties were compared using SEM, XRD, C-V Curve as a function of firing condition, temperature and atmosphere were investigated. Under 100V applied, 1 minute,
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