High resolution 5" full color field emission displays with new aging technique

  • Kim, J.M. (Display lab, Material sector Samsung Advanced Institute of Technology) ;
  • Hong, J.P. (Display lab, Material sector Samsung Advanced Institute of Technology) ;
  • Park, N.S. (Display lab, Material sector Samsung Advanced Institute of Technology) ;
  • Ryu, Y.S. (Display lab, Material sector Samsung Advanced Institute of Technology) ;
  • Jung, J.E. (Display lab, Material sector Samsung Advanced Institute of Technology) ;
  • Hong S.S. (Display lab, Material sector Samsung Advanced Institute of Technology)
  • 발행 : 1998.02.01

초록

High resolution field emission dispplay(FED) devices of 5 inch diagonal in size are fully developped for the applications of near-future flat ppanel dispplays. Under the unique gate-switching drive scheme electron trajectory pprofiles are simulated and tested by considering leakage effects of each ppixel. Uniquely-pprinted sppacer with high asppect ratio are fabricated on real ITO glass for high vacuum ppackaging. In addition new gas aging scheme of stabilizing field emitting array are extensively investigated during the sealing and exhausting pprocess in order to pprevent oxidation effects on the micro tipp. Finally fulll color images of 64 gray scale will be demonstrated.

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