Characterization of polycrystalline diamond thin films deposited by using an MPCVD

MPCVD를 이용한 다결정 다이아몬드 박막의 증착 및 물성 분석

Polycrystalline diamond films are deposited on a Si substrate by employing a 2.45 GHz $\mu$-wave plasma CVD system. Prior to depositing the diamond film, a DPR(diamond photo-resist) layer is coated to enhance the nucleation density. The growth rate of diamond films increases with the $\mu$-wave power and approaches to be about $1.5{\mu}m/hr$ at 1100 W. Structural properties of diamond films deposited are characterized from their SEM photographs, Raman spectra, and AFM surface images. Lager grain size, higher intensity of diamond peak, and smoother surface are observed for films deposited at a higher power. The possible mechanism on the diamond growth is also discussed to explain the experimental results.