Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1998.07d
- /
- Pages.1327-1329
- /
- 1998
Electrical Characteristics of Devices with Material Variations of PMD-1 Layers
PMD-1 층의 물질변화에 따른 소자의 전기적 특성
- Seo, Yonq-Jin (Daebul University) ;
- Kim, Sang-Yong (Yeojoo University) ;
- Yu, Seok-Bin (Yeojoo University) ;
- Kim, Tae-Hyung (Chungang University) ;
-
Kim, Chang-Il
(Yeojoo University)
;
-
Chang, Eui-Goo
(Yeojoo University)
- 서용진 (대불대학교 전기전자공학부) ;
- 김상용 (중앙대학교 전기공학과) ;
- 유석빈 (중앙대학교 전기공학과) ;
- 김태형 (여주대학교 전기과) ;
-
김창일
(중앙대학교 전기공학과)
;
-
장의구
(중앙대학교 전기공학과)
- Published : 1998.07.20
Abstract
It is very important to select superior inter-layer PMD(Pre Metal Dielectric) materials which can act as penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with material variation of PMD-1 layers, which were split by LP-TEOS, SR-Oxide, PE-Oxynitride, PE-Nitride, PE-TEOS films. It was observed that the oxynitride and nitride using plasma was greatly decreased in hot carrier effect in comparison with silicon oxide. Consequently, silicon oxide turned out to be a better PMD-1 material than PE-oxynitride and PE-nitride. Also, LP-TEOS film was the best PMD-1 material Among the silicon oxides.
Keywords