A Study on Etching of Platinum Thin Film in ICP Using Ar/HBr/$Cl_2$ Gases

ICP를 이용한 Ar/HBr/$Cl_2$ 가스에서 백금 박막의 식각 연구

Platinum thin films which hardly form volatile compounds with any reactive gas at normal process temperature was etched in Inductively Coupled Plasma (ICP) using Ar/HBr/$Cl_2$ gases. It is observed that the etch rate of platinum is reduced as increasing of HBr/$Cl_2$ gas mixing ratio when Ar gas ratio is fixed. However, we obtain good etching profile of platinum films without unwanted residues in 90% Ar/5% HBr/5% $Cl_2$ gas mixing ratio.