Capacitance properties of DLPC LB films with MLS structure fabricated by moving wall type method

Moving wall형 LB법으로 제작된 MLS DLPC LB 박막의 제작과 캐패시턴스 특성

LB layers of L-$\alpha$-DLPC deposited by LB method were deposited onto n-type silicon wafer as Z-type film. Films made up of 8, 16 layers of lipid with long alkyl chain and the thickness of monolayer and multilayers was determined by ellipsometry. It was deposited Ag and Al onto LB layers and silicon wafer for electrode and small electrode exhibit high capacitance and low leakage current. The C-V curves of the MLS capacitor shows very high saturation value of capacitance. And cross-sectional SEM image of MLS capacitor indicated the presence of pore with Al electrode and we found that the Ag is good for electrode metal.