Characterization of $Cu(In_xGa_{1-x})Se_2$ Solar Cells with Ga Content

Ga 함량에 따른 $Cu(In_xGa_{1-x})Se_2$ 태양전지의 특성분석

  • Kim, Seok-Ki (Photovolatic research team Korea Institute of Energy Research) ;
  • Kwon, Se-Han (Department of Materials Science and Engineering KAIST) ;
  • Lee, Doo-Yeol (Department of Materials Science and Engineering KAIST) ;
  • Lee, Jeong-Churl (Photovolatic research team Korea Institute of Energy Research) ;
  • Kang, Ki-Whan (Photovolatic research team Korea Institute of Energy Research) ;
  • Yoon, Kyung-Hoon (Photovolatic research team Korea Institute of Energy Research) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering KAIST) ;
  • Song, Jin-Soo (Photovolatic research team Korea Institute of Energy Research)
  • Published : 1998.07.20

Abstract

$Cu(In_xGa_{1-x})Se_2$ thin films were prepared and characterized with various Ga contents. As the Ga content increased, the grain size of CIGS film became smaller. The 2 $\theta$ values in XRD patterns were shifted to larger values and the overlapped peaks were splitted. The energy bandgap increased from 1.04 to 1.67 eV and the resistivity decreased. The solar cell fabricated with ZnO/CdS/$Cu(In_{0.7}Ga_{0.3})Se_2/Mo$ structure yielded an efficeincy of 14.48% with an acitive area of 0.18 $cm^2$. The efficiency decreased with further increase of Ga content.

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