Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Effects of Post-annealing on Laser CVD SiON Films

Laser CVD SiON막의 막 형성 후 열처리 의존성

  • Kim, C.D. (Dept.of Electrical Engineering, Korea Univ.) ;
  • Kim, I.S. (Dept.of Electrical Engineering, Korea Univ.) ;
  • Koh, J.H. (Dept.of Electrical Engineering, Korea Univ.) ;
  • Lee, S.K. (Dept.of Electrical Engineering, Korea Univ.) ;
  • Sung, Y.K. (Dept.of Electrical Engineering, Korea Univ.)
  • 김창덕 (고려대학교 대학원 전기공학과) ;
  • 김인수 (고려대학교 대학원 전기공학과) ;
  • 고중혁 (고려대학교 대학원 전기공학과) ;
  • 이상권 (고려대학교 대학원 전기공학과) ;
  • 성영권 (고려대학교 대학원 전기공학과)
  • Published : 1997.11.29
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Abstract

The anneal behavior of ArF excimer Laser CVD SiON films has been studied using FT-IR absorption spectroscopy. The anneal temperature range was $400{\sim}800^{\circ}C$ Abundant hydrogen effusion from thes layers was observed as anneal temperature increased. The coexistence of both Si-H am N-H bonds offers the possibility for cross linking am evidence for the occurrence of cross lingking was found in the IR spectrum. The electrical properties were also obtained that tire films have low leakage currents am good TZDB properties.

Keywords