A Stochastic Model of Voltage-Gated Ion Channel

  • Lee, Kwonmoo (Department of Physics, Pohang University of Science and Technology) ;
  • Wokyung Sung (Department of Physics, Pohang University of Science and Technolog) ;
  • Gabriel Weinreb (Institute for Physics)
  • Published : 1997.07.01

Abstract

We model the voltage-gated cation channel on the basis of stochastic process by taking into account transmembrane movement of S4 group interacting electrostatically with permeant ions. It is assumed that the interaction between the ion and S4 group is repulsive harmonic force and the ionic motion is much faster than that of the S4 group.(omitted)

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