Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.11a
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- Pages.242-245
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- 1997
Electrical Characteristics of Ultra-Shallow n+/p Junctions Formed by Using CoSi$_2$ as Diffusion Source of As
CoSi$_2$ 를 As의 확산원으로 형성한 매우 얇은 n+/p 접합의 전기적 특성
Abstract
Co single layer and Co/Ti used to form a CoSi
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