Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
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- Pages.1609-1611
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- 1996
Comparison of the On-Resistance between the RESURF LDMOS and the VDMOS
RESURF LDMOS와 VDMOS의 ON 저항 비교연구
- Park, Il-Yong (School of Electrical Eng. Ajou University) ;
- Hwang, Kue-Han (School of Electrical Eng. Ajou University) ;
- Choi, Yearn-Ik (School of Electrical Eng. Ajou University)
- Published : 1996.07.22
Abstract
The on-resistance characteristics of the RESURF LDMOS and VDMOS are compared. The on-resistance vs. breakdown characteristics of the RESURF LDMOS is analytically investigated. The on-resistance of RESVRF LDMOS is as almost same as that of VDMOS.
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