Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
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- Pages.1579-1581
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- 1996
High Temperature Characteristics of SOI BMFET
SOI BMFET 의 고온 특성 분석
- Lim, Moo-Sup (School of Electrical Eng., Seoul Nat'l Univ.) ;
- Kim, Seoung-Dong (School of Electrical Eng., Seoul Nat'l Univ.) ;
- Han, Min-Koo (School of Electrical Eng., Seoul Nat'l Univ.) ;
- Choi, Yearn-Ik (School of Electrical Eng., Ajou Univ.)
- Published : 1996.07.22
Abstract
The high temperature characteristics of SOI BMFET are analyzed by the numerical simulation and compared with MOS-gated SOI power devices at high temperatures. The proposed SOI BMFET combines bipolar operation in the on-state with unipolar FET operation in the off-state, so that it may be suitable for high temperature operation without any significant degradation of performance such as the leakage current and blocking capability. The simulation results show that SOI BMFET with a higher doped n-resurf layer is the most promising device far high temperature application as compared with MOS-gated SOI power devices, exhibiting the low on-state voltage drop as well as the excellent forward blocking capability at high temperature.
Keywords