대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1996년도 하계학술대회 논문집 C
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- Pages.1547-1549
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- 1996
금이 도우핑된 P-I-N 다이오드의 전기적 및 광학적 스위칭 특성
Electrical and Optical Switching Characteristics of Gold-Doped P-I-N Diodes
- Min, Nam-Ki (Korea University) ;
- Ha, Dong-Sik (Korea University) ;
- Lee, Seong-Jae (Daerim College)
- 발행 : 1996.07.22
초록
The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is
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