Cu-Ni계 박막 스트레인 게이지의 개발

Development of Cu-Ni Thin Film Strain Gages

Thin films of Cu-Ni alloys of various compositions were prepared by RF sputtering onto glass and stainless steel substrates. The effect of composition, substrate temperature, Ar partial pressure, aging time on the electrical properties of Cu-Ni film strain gages in the thickness range $500{\sim}2000{\AA}$ was studied. The maximum resistivity is obtained from 53wt%Cu-47wt%Ni films, while their TCR becomes minimum. This tendency is very desirable for thin film strain gages.