Fabrication of the 20{\mu}m$-height Polyimide Microstructure Using $O_2$ RIE Process

$O_2$ RIE 공정을 이용한 20{\mu}m$ 두께의 폴리이미드 마이크로 구조물의 제작

  • Baek, Chang-Wook (Department of Electrical Engineering, Seoul National University) ;
  • Kim, Yong-Kweon (Department of Electrical Engineering, Seoul National University)
  • Published : 1995.11.18

Abstract

Using the $O_2$ RIE process, 20{\mu}m$-height polyimide microstructures are fabricated. In LIGA-like process, metal microstructure can be formed by the electroplating using these polyimide microstructures as a plating mould. Reactive ion Etching technique using oxygen gas is used for the patterning of polyimide. The etching rate of the polyimide is increased with increased pressure and RF power. The anisotropic vertical sidewall can be obtained at low pressure, but the etched surface state is not so good yet. "Micrograss", which is formed during the RIE and disturbs uniform electroplating, can be removed effectively by the wet itching of the chromium sacrificial layer. More studies about the improvement of an etched surface state and the removal of microsgrass are needed.

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