한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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- Pages.54-57
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- 1995
Scaled MONOS 비휘발성 기억소자의 스위칭 특성
Switching characteristics of the Scaled MONOS Nonvolatile Memory Devices
초록
This study is to investigate the switching charac-teritics in the5V-programmable scaled MONOS nonvolatile memory devices, Modified Folwer-Nordheim tunneling mechanism become important when the electric field in the tunneling oxide is 6 MV/cm for E
키워드