대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Sol-Gel법에 의한 Pb(Zr,Ti)$O_3$ 박막의 제조 및 유전 특성

Preparation and Dielectric properties of the Pb(Zr,Ti)$O_3$ Thin Film by Sol-Gel Method

  • 정장호 (광운대학교 전자재료공학과) ;
  • 박인길 (광운대학교 전자재료공학과) ;
  • 류기원 (여주전문대학 전자과) ;
  • 이성갑 (서남대학교 전자공학과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • Chung, Jang-Ho (Dept. of Electronic Materials Eng. Kwang Woon Univ.) ;
  • Park, In-Gil (Dept. of Electronic Materials Eng. Kwang Woon Univ.) ;
  • Ryu, Ki-Won (Dept. of Electronic Eng. Yeo Joo Technical College) ;
  • Lee, Sung-Gap (Dept. of Electronic Eng. Seo Nam Univ.) ;
  • Lee, Young-Hie (Dept. of Electronic Materials Eng. Kwang Woon Univ.)
  • 발행 : 1995.07.20
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초록

In this study, $Pb(Zr_xTi_{1-x})O_3$(x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol.%] of $Pb(Zr_xTi_{1-x})O_3$ was made and spin-coated on the Pt/$SiO_2$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at $400[^{\circ}C]$ for 10[min.]. Sintering temperature and time were $500{\sim}800[^{\circ}C]$ and $1{\sim}60$[min.]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin films were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of $700[^{\circ}C]$ for 1 hour. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.

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