대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1995년도 하계학술대회 논문집 C
- /
- Pages.1025-1027
- /
- 1995
실리콘 선택적 기상 성장을 이용한 마이크로 센서에 응용되는 구조물 제조법
Application of selective Epitaxial Growth of Silicon on MEMS Structure
- Pak, J.Jung-Ho (Dept. of Electrical Engineering, Korea University) ;
- Kim, Jong-Kwan (Dept. of Electrical Engineering, Korea University) ;
- Kim, Sang-Young (Dept. of Electrical Engineering, Korea University) ;
- Sung, Yung-Kwon (Dept. of Electrical Engineering, Korea University)
- 발행 : 1995.07.20
초록
SEG(Selective Epitaxial Growth) and ELO(Epitaxial Lateral Growth) of Silicon offer new opportunities in the fabrication of MEMS(Micro Electro-Mechanical Systems) structures. SEG of silicon enables the stacking of junctions in addition to those resulting from the standard bipolar process and this properly was utilized for the fabrication of an improved-performance color sensor. When the crystalline growth takes place through the seed windows and proceeds over the dielectric, after reaching the surface, it form an ELO silicon layer and this ELO-Si can be modified into various structures for MEMS application such as cantilevers, beams, diaphragms.
키워드