Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1993.11a
- /
- Pages.134-136
- /
- 1993
Monte-Carlo Simulation of Focused ton Beam Lithography
집속 이온빔 리소그라피의 몬데칼로 전산 모사
Abstract
Microelectronic fabrication technology .is based on the use of lithsgraphy to create small linewidths and patterns that make up ULSI. In previous papers, we discussed the theoretically calculated values such as ion range, ion concentration,ion transmission coefficient and the defocused ion beam-induced characteristics in a-Se
Keywords