집속이온빔 (FIB) 레지스트를 위한 비정질 $Se_{75}Ge_{25}$ 박막의 이온 및 광유기특성

-The Optical- and Ion-Induced Characteristics of a-$Se_{75}Ge_{25}$ Thin Film for Focused Ion Beam (FIB)-

This thesis was investigated on optical-and ion-induced characteristics in positive(a-$Se_{75}Ge_{25}$) and negative (Ag/a-$Se_{75}Ge_{25}$) resists for focused-ion-beam microlithogaphy. The a-$Se_{75}Ge_{25}$ inorganic thin film shows an increase in optical absorption after exposure to$\sim$$10^{16}$ dose(ions/$cm^{2}$) of Ga ions. The observed shift in the absorption edge toward longer wavelengths is consistent with that in films exposed to band-gap photons ($\sim$$10^{20}$ photons/$cm^{2}$). But, ion induced shift is twice as much as that in film exposed to optical radiation. This result may be related with microstructural rearrangements with in the short range of SeGe network. Due to changes in the short range order, the chemical bonding may be affected, which results in increased chemical dissolution in ion-induced film. Also, this resist exhibits good thermal stability because of its high Tg(~220$^{\circ}C$). The composition of deposited film measured by AES is consistent with that of bulk.