대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1992년도 하계학술대회 논문집 B
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- Pages.839-842
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- 1992
Microwave GaAs MESFET의 특성해석 Modeling에 관한 연구
A Study on the Modeling of Microwave GaAs MESFETs
- Lee, Hyun-Seok (Dept. of Electrical Eng. Korea University) ;
- Lim, Kyoung-Moon (Dept. of Electrical Eng. Korea University) ;
- Cho, Ho-Yeol (Dept. of Electrical Eng. Korea University) ;
- Kim, Young-Sic (Dept. of Electrical Eng. Korea University) ;
- Sung, Man-Young (Dept. of Electrical Eng. Korea University)
- 발행 : 1992.07.23
초록
This paper describes an improved analytic model for a gallium-arsenide MESFET computer simmulation and deals with application to microwave performance. The current-voltage characteristics, the dependence of the capacitances, transconductances and drainconductances on bias conditions and the dependences of s-parameters on various frequencies are calculated. The model is base on a physical picture revealed through two-dimensional numerical analysis, and takes into account transition region and diffusion process under gate but it require a very small computer time. Simulation results agree well with the experimental data found earlier by other author The proposed model can be used for a computer-aided design of GaAs MESFET devices and for a study of application to microwave performance.
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