• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.592-598
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• 1998

AZO(Aluminum doped Zinc Oxide) thin films were fabricated by reactive DC magnetron sputtering method using zinc metal target (Al 2%) and zinc oxide target ($Al_2O_3\;2%$) respectively. The intermediate condition with optimum transmittance and conductivity was obtained by controlling the sputtering parameters. Oxygen gas ratio for this condition was $0.5{\times}10^{-2}~1.0{\times}10^{-2}$ in oxide target and. In case of metal target, this optimum oxygen gas ratio at the applied power of 0.6 kW and 1.0 kW was 0.215~0.227 and 0.305~0.315, respectively. The resistivity of AZO film deposited was obtained $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}$cm as deposited state regardless of target species.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.46-58
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• 1991

The synthesized ZnO powder was prepared by spray pyrolysis method using ultrasonic vibrator. The starting solutons were the aqueous solution of $Zn(NO_3)_2\cdot6H_2O$. The concentration was prepared 1M, O.5M, O.25M, and O.lM. The Nz carrier gas was 2.3cm$\cdot{sec}^{-1}$. The prepared powder from the $Zn(NO_3)_2{\cdot}6H_2O$ aqueous solution was Zine oxide with hexagonal structure. The shape of prepared powder was fine size, narrow size distribution, agglomerate-free, nearly sphere particle. Also, the particle size was about $ 0.28-0.61\mum$.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.78-84
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• 1999

$(Ni, Zn)Fe_2O_4$ powders were prepared through self-propagating high temperature synthesis reaction and the effects of initial zinc oxide powder size and oxygen pressure on the magnetic properties of the final combustion products were studied. The ferrite powders were combustion synthesized with iron, iron oxide, nickel oxide, and zinc oxide powders under various oxygen pressures of 0.5~10 atmosphere after blended in n-hexane solution for 5 minutes with a spex mill, followed by dried at 120 $^{\circ}C$ in vacuum for 24 hours. The maximum combustion temperature and propagating rate were about 1250 $^{\circ}C$ and 9.8 mm/sec under the tap density, which were decreased with decreasing ZnO size and oxygen pressure. The final product had porous microstructure with spinel peaks in X-ray spectra. As the ZnO particle size in the reactant powders and oxygen pressure during the combustion reaction increase, coercive force, maximum magnetization, residual magnetization, squareness ratio were changed from 1324 Oe, 43.88 emu/g, 1.27 emu/g, 0.00034 emu/gOe, 37.8$^{\circ}C$ to 11.83 Oe, 68.87 emu/g, 1.23 emu/g, 0.00280 emu/gOe, 43.9 $^{\circ}C$ and 7.99 Oe, 75.84 emu/g, 0.791 emu/g, 0.001937 emu/gOe, 53.8 $^{\circ}C$ respectively. Considering the apparent activation energy changes with oxygen pressure, the combustion reaction significantly depended on initial oxygen pressure and ZnO particle size.

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.47-50
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• 1986

Photodesorption of adsorbed $O_2^-$ on ZnO was investigated in ZnO-$O_2(N_2)$-rubrene-bromobenzene mixture. When the mixture was illuminated with the light having the energy greater than the band gap energy of ZnO (3.2eV), the amount of reacted rubrene increased as the amount of ZnO increased in the experimental condition. For the energy of light less than 3.2eV, however, the reacted amount of rubrene decreased as the amount of ZnO increased. There is a difference in the reacted amount of rubrene between ZnO-$O_2$-rubrene-bromobenzene and ZnO-$N_2$-rubrene-bromobenzene mixtures. From the results, it was suggested that the adsorbed $O_2^-$ on ZnO transform to singlet oxygen in the photodesorption process and the singlet oxygen reacted with rubrene.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.842-848
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• 1998

The stability of paraseodymium-based zinc oxide varistor consisting of Zn-Pr-Co-Cr-Y oxide was investigated according to yttria additives under different stress conditons, such as 0.8V\ulcorner\ulcorner/373K/12h and 0.85V\ulcorner\ulcorner/393K/12h. Wholly, all varistor after the stress showed nearly symmetric and stable I-V characteristics. Particularly, in the case of 2.0mol% and 4.0mol% yttria-added varistor showing a good I-V characteristics, the varation rate of varistor voltage were less 1% and that of nonlinear coefficient were about degree of 5%, and what is remarkable, leakage current with increasing stress time during the applied stress was almost constant. It the light of these facts, it is estimated that varistor constituents having 2.0mol% and 4.0mol% yittria, respectively, will be utilized to various application fields.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.928-934
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• 2002

Gallium doped Zinc Oxide(GZO) films were deposited by dc magnetron sputtering using a GZO ceramic target at various conditions such as substrate temperature (RT, 400), residual water pressure ($P_{H_2O}$; 1.61${\times}10^{-4}∼2.2{\times}10^{-3}$ Pa), introduction of $H_2$ gas (8.5%) and different magnetic field strengths(250, 1000G). GZO films deposited without substrate heating showed clear degradation in film crystallinity and electrical properties with increasing $P_{H_2O}$. The resistivity increased from 3.0${\times}10^{-3}$ to 3.1${\times}10^{-2}{\Omega}㎝$ and the grain size of the films decreased from 24 to 3 nm when PH2O was increased from 1.61${\times}10^{-4}$ to 2.2${\times}10^{-3}$ Pa. However, degradation in electrical properties with increasing $P_{H_2O}$ was not observed for the films deposited with introduction of 8.5% $H_2$. When magnetic field strength of the cathode increased from 250G to 1000G, crystallinity and electrical properties of GZO films improved remarkably about all the $P_{H_2O}$. This result could be attributed to the decrease in film damage caused by the decrease in plasma impedance.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.505-513
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• 1993

To make the electrophotographic photoreceptor that srnsirizes for panchromatic matcrial, the dying element of sunfasr yellow which has an absorption ivavclength at near 400nm, and $\alpha,\beta$-copper phthalocyaninc dying elements with 700nm absorption wavelength were adsorbed and then dispersed onto the zine oxide(Zn0). In ordcr to characterize rhe change In sensitivity the various binders and different mole ratio of ZnO to binder were employed in here. It was found rhat the optimum sensitivity was obtained with 5.5 ratio. I;rom the measurements of electrostatic and spectral sensitivity, it was found that the maximum photographic properties were obtained for mixing the sunfast yellow and $\beta$-copper phthalocyaninr. In this case the electrophotographic sensiri\ity was found to he $E{1:2}$= 1440 lux . sec. And also the spectral sensitivity shows that it had a good properties for panchromatic matcrial.