• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.4
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• pp.120-126
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• 2001

For the past five years, Inha University has been observing the electric fields produced by cloud-to-ground return strokes. This paper presents the summary of most recent results. Statistics on the zero-to-peak rise time, the zero-to-zero crossing time and the amplitude ratio of the second peak in the opposite polarity to the first peak were examined. The radiation electric fields produced by distant cloud-to-ground return strokes were substantially same pattern. The first return stroke field starts with a slowly increasing front and rises abruptly to peak. The rising portions of the electric fields produced by cloud-to-ground return strokes last 1 $mutextrm{s}$ to a few $mutextrm{s}$. The mean values of the zero-to-peak rise times of electric fields were 5.72 $mutextrm{s}$ and 4.12 $mutextrm{s}$ for the positive and the negative cloud-to-ground return strokes, respectively. The mean of the zero-to-zero crossing time for the positive return strokes was 29.48 $mutextrm{s}$ compared with 38.54 $mutextrm{s}$ for the negative return strokes. The depths of the dip after the peak of return stroke electric fields also have the dependence on the polarity of cloud-to-ground return stroke, and the mean values for the positive and negative cloud-to-ground return strokes were 33.55 and 28.19%, respectively.

• Communications of the Korean Mathematical Society
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• v.33 no.2
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• pp.379-395
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• 2018

Assume that R is a commutative ring with non-zero identity which is not an integral domain. An ideal I of R is called an annihilating ideal if there exists a non-zero element $a{\in}R$ such that Ia = 0. S. Visweswaran and H. D. Patel associated a graph with the set of all non-zero annihilating ideals of R, denoted by ${\Omega}(R)$, as the graph with the vertex-set $A(R)^*$, the set of all non-zero annihilating ideals of R, and two distinct vertices I and J are adjacent if I + J is an annihilating ideal. In this paper, we study the relations between the diameters of ${\Omega}(R)$ and ${\Omega}(R[x])$. Also, we study the relations between the diameters of ${\Omega}(R)$ and ${\Omega}(R[[x]])$, whenever R is a Noetherian ring. In addition, we investigate the relations between the diameters of this graph and the zero-divisor graph. Moreover, we study some combinatorial properties of ${\Omega}(R)$ such as domination number and independence number. Furthermore, we study the complement of this graph.

• Transactions on Electrical and Electronic Materials
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• v.13 no.1
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• pp.23-26
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• 2012

A zero-shrinkage sintering process in which the shrinkage of x-y axis is controlled to be zero is in great demand due to the trend of high integration in the ceramic modules. Among the zero-shrinkage sintering processes that are available, the proposed glass infiltration method where the viscous but fluidic glass infiltrates of the $Al_2O_3$ particles in the structure of $Al_2O_3$/glass/$Al_2O_3$ during firing is one of the applicable methods. However, the above proposed glass infiltration method has the problem of the warpage-like delamination. This occurred at the outermost surface of the multiple-bundle substrate. It is thought that the decomposed gas rapidly expands in low viscous glass to create vacant space. To solve this problem, the vacant space was tamped with $Al_2O_3$ particles to lead to the actual improvement of the sintered properties. With 15 wt% of tamping $Al_2O_3$ particles in glass, most of the vacant space disappeared. Fully densified zero-shrinkage substrate without delamination can be obtained.

• Communications of the Korean Mathematical Society
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• v.36 no.2
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• pp.197-207
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• 2021

The main purpose of this paper is to study the zero-divisor properties of the zero-symmetric near-ring of skew formal power series R₀[[x; α]], where R is a symmetric, α-compatible and right Noetherian ring. It is shown that if R is reduced, then the set of all zero-divisor elements of R₀[[x; α]] forms an ideal of R₀[[x; α]] if and only if Z(R) is an ideal of R. Also, if R is a non-reduced ring and annR(a - b) ∩ Nil(R) ≠ 0 for each a, b ∈ Z(R), then Z(R₀[[x; α]]) is an ideal of R₀[[x; α]]. Moreover, if R is a non-reduced right Noetherian ring and Z(R₀[[x; α]]) forms an ideal, then ann_R(a - b) ∩ Nil(R) ≠ 0 for each a, b ∈ Z(R). Also, it is proved that the only possible diameters of the zero-divisor graph of R₀[[x; α]] is 2 and 3.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.4
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• pp.801-810
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• 1998

Modeling and analysis of dynamic systems generally demand their resutls to be interpreted each other with a physical sense. It sometimes requires that there should exist a unified tool in the treatment of dynamic systems which can be applied to both their modeling and analysis equally. This paper shows how models just after the progress of modeling via bond graph standards are converted to ones which are appropriate for analyzing a dynamic system in the frequency domain. Four bond graph prototypes are introduced to obtain frequency properties of dynamic systems such as zero stability, relative order, zero and pole dynamics, etc. directly from bond graphs, and the method are proposed which reduces nearly all models of bond graph standards to one of the prototypes without any change of physical similarity. This procedure as a tool for the structural reduction of bond graphs and finding frequency properties of a dynamic system is further investigated to survey its effectiveness through an example.

• Management Science and Financial Engineering
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• v.18 no.1
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• pp.13-20
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• 2012

This paper considers a revenue maximization problem on a single processor. Each job is identified as its processing time, initial reward, reward decreasing rate, and preferred start time. If the processor starts a job at time zero, revenue of the job is its initial reward. However, the revenue decreases linearly with the reward decreasing rate according to its processing start time till its preferred start time and finally its revenue is zero if it is started the processing after the preferred time. Our objective is to find the optimal sequence which maximizes the total revenue. For the problem, we characterize the optimal solution properties and prove the NP-hardness. Based upon the characterization, we develop a branch-and-bound algorithm for the optimal sequence and suggest five heuristic algorithms for efficient solutions. The numerical tests show that the characterized properties are useful for effective and efficient algorithms.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.27-31
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• 2015

It was the electrical properties of ZnS treated by the annealing in a vaccum and an atmosphere conditions to reseached the leakage current effect of semiconductor devices. Most samples were shown the non-linear with unipolar properties, but the ZnS annealed at $100^{\circ}C$ in a vaccum was only observed no leakage current in a range of -20 V< voltage < 15 V. The crystallinity of ZnS with no leakage current was improved and optical property was also improved. Because the ambipolar characteristics and low leakage currents originated from the extension effect of a depletion width by electron-hole combination in the depletion layer.

• International Journal of Air-Conditioning and Refrigeration
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• v.13 no.4
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• pp.206-216
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• 2005

Numerical analysis has been carried out to investigate laminar convective heat transfer at zero gravity in a tube for supercritical water near the thermodynamic critical point. Fluid flow and heat transfer are strongly coupled due to large variation of thermodynamic and transport properties such as density, specific heat, viscosity, and thermal conductivity near the critical point. Heat transfer characteristics in the developing region of the tube show transition behavior between liquid-like and gas-like phases with a peak in heat transfer coefficient distribution near the pseudo critical point. The peak of the heat transfer coefficient depends on pressure and wall heat flux rather than inlet temperature and Reynolds number. Results of the modeling provide convective heat transfer characteristics including velocity vectors, temperature, and the properties as well as the heat transfer coefficient. The effect of proximity on the critical point is considered and a heat transfer correlation is suggested for the peak of Nusselt number in the tube.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.39-43
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• 2022

In this paper, a study was conducted on encapsulation technology for high mechanical stability of flexible displays. First, unlike conventional encapsulation barrier that exclude cracks as much as possible for low water vapor transmission rate (WVTR), mechanical properties were improved by using a defect suppression mechanism introduced with crack arresters. The zero-stress encapsulation barrier optimizes the residual stress of the thin film based to improve the internal mechanical stability. The zero-stress encapsulation barrier was applied to the organic light emitting diodes (OLEDs) to confirm its characteristics and lifetime. Due to improved internal mechanical stability, it has a longer lifetime more than 35% compared to conventional encapsulation technologies. As the zero-stress encapsulation barrier proposed in this study does not require additional deposition process, it is not difficult to apply it. Based on various advantages, it is expected to play an important role in flexible displays.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1276-1282
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• 1995