• Title/Summary/Keyword: yttria stabilized zirconia

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The characteristics of Organic Thin Film Transistors with high-k dielectrics

  • Kim, Chang-Su;Kim, Woo-Jin;Jo, Sung-Jin;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1288-1290
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    • 2005
  • We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

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Influences of Electrochemical Vapor Deposition Conditions on Growth Rate ad Characteristics of YSZ Thin films(II) (YSZ 박막의 성장속도와 특성에 미치는 전기화학증착의 조건의 영향(II))

  • 박동원;전치훈;김대룡
    • Journal of the Korean Ceramic Society
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    • v.33 no.3
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    • pp.355-361
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    • 1996
  • Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates. Y2O3 mol% of thin film was linearly increased with yttrium mole fraction of vapor phase. As yttrium mole fraction(Zyc13=0.18) increased dense and faceted thin films were enhanced. However as the yttrium mole fraction (Zyc13=0.04) decreased porous thin films with monoclinnic phase prevailed. With increasing pressure difference of substrate sides penetration depth decreased porosity and amount of monoclinic phase in the films increased.

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Effect of $SiO_2$ and $Al_2O_3$ on Characteristics of Yttria-Stabilized Zirconia Ceramics (아트리아 안정화 지르토니아 소결체의 특성에 $SiO_2$$Al_2O_3$ 가 미치는 영향)

  • 손정덕;최시영;조상희
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.6
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    • pp.886-894
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    • 1990
  • Sinterbility, microstructure, mechenical and electrical properties of yttriastabilized zirkconiz (92 mole % ZrO2 + 8 mole % Y2O3) doped with 0.5 mole % SiO2 and 0-2.O mole% Al2O3 were studied as a functin of Al2O3 addition. Sintered density increased with increasing Al2O3 addition up to o.5 mole%but decreased up to 1.0mole% Al2O3. Vickers hardness is proportional to sintered density. The specimen added 0.5mole% Al2O3 and 0.5mole% SiO2 exhibited a maximum conductivity. And the specimen added 0.5 mole % Al2O3 and 0.5 mole% SiO2 was measured a maximum electromotive force for a characteristics of oxyzen partial pressure.

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Development of advanced laser processing for the fabrication of HTS metallic tapes for power applications (전력용 고온초전도 금속테이프 제작을 위한 첨단 레이저공정 개발)

  • Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.688-691
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    • 1997
  • Good quality superconducting $YBa_2Cu_30_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy (Ni-Cr-Mo alloys) with yttria-stabilized zirconia(YSZ) buffer layers by in situ pulsed laser deposition in a multi-target processing chamber. Generally, Hastelloy exhibits excellent resistance to corrosion, fatigue, thermal shock, impact, and erosion. However, it is difficult to make films on flexible metallic substrates due to interdiffusion problems between metallic substrates and superconducting overlayers. To overcome this difficulty, it is necessary to use YSZ buffer layer since it will not only limit the interdiffusion process but also minimize the surface microcrack formation due to smaller mismatch between the film and the substrate. In order to enhance the crystallinity of YBCO films on metallic substrates, YSZ buffer layers were grown at various temperatures different from the deposition temperature of YBCO films. On YSZ buffer layer grown at higher temperature than that for depositing YBCO film, the YBCO thin film was found to be textured with c-axis orientation by x-ray diffraction and had a zero-resistance critical temperature of about 85K.

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산소 동위원소를 이용한 산화물 이온 전도체의 산소 확산 거동 연구

  • Hong, Tae-Eun;Byeon, Mi-Rang;Bae, Gi-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.212-212
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    • 2014
  • 이트리아 안정화 지그코니아(Yttria-stabilized zirconia, YSZ)는 이트리아의 첨가에 의해 지르코니아에 생성된 산소 빈자리(oxygen vacancy)로 $O^{2-}$ 이온이 전도성을 가지게 되는 특징이 알려지면서 최근 고체산화물 연료전지연구에서 많은 관심을 받고 있다.[1] YSZ를 기반으로한 고체산화물 연료전지의 특성을 개선하기 위해서는 YSZ 내에서의 산소교환 메카니즘을 이해하는 것이 매우 중요하다. 본 연구에서는 $^{18}O2$ 추적 기체(tracer gas) 이용하여 확산된 YSZ박막에서의 산소 확산 거동을 초미세이차이온질량분석기(Nano Secondary Ion Mass Spectrometry, Nano SIMS)를 이용하여 조사하였다. Nano SIMS는 작은 입사 이온빔의 크기를 구현할 수 있고, 다중검출기를 이용하여 높은 질량분해능으로 간섭없이 산소동위원소를 동시에 모두 검출할 수 있는 장점이 있다. 본 발표에서는 Nano SIMS를 이용한 YSZ박막에서의 산소 거동 평가 결과를 상세하게 보일 것이다.

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Study on Degradation of A/F Sensor (A/F 센서의 열화해석)

  • 권창순;이정호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.101-105
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    • 1994
  • A/F sensor with a sensing and a pumping element, which is made of YSZ(yttria stabilized zirconia) sheets, can be used for the combustion control of lean burn engine. A/F sensor can detect the oxygen partial pressure in more wide range than the other oxygen sensors, such as the limiting current type oxygen sensor and λ-sensor. However this sensor has the disadvantage that the characteristics has been degraded rapidly due to the physical or electrochemical reasons. The blackening phenomenon is known as one of the degradations caused by high voltage biased for oxygen pumping. In this paper, we have studied to analyze the blackening phenomenon by comparing two characteristics between before and after blackening in impedance spectroscopy, and discussed the blackening mechanism.

유도플라즈마에 의한 후판침적물 제조

  • 정인하;배기광
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1997.10a
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    • pp.29-29
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    • 1997
  • 화학반응 또는 화학증착분야에 주로 이용해 오던 유도플라즈마를 이용하여 고밀도의 두꺼운 세라믹 침적물을 제조하였다. Yttria Stabilized Zirconia 분말을 이용하여 최적조건에서 두께 약 5mm, 이론밀도 90% 이상의 침적물을 얻었다. 실험변수는 플라즈마 가스조성, 플라즈마동력, 입자의 크기, 용사거리 등으로 하였으며, 각각의 실험조건에서 용사된 spherodized particle을 수집하여 각 실험조건에서 용융된 입자의 상태를 비교하였다. 또, 침적물의 표면을 에칭시켜 각 실험조건에서의 침적상태를 관찰 및 비교하여 각각의 실험변수가 침적물의 밀도에 미치는 영향을 관찰하였다. 실험결과 높은 밀도의 침적물을 만들기 위해서는 분말의 용융상태, 용사챔버 내부압력, 분말분사거리가 중요한 변수임을 알 수 있었다. 실험에서 얻어진 결과는 ANOVA 통계기법으로 분석하여 단일변수의 영향뿐만 아니라 이들 영향이 서로 조합하여 결과에 미치는 조합효과도 분석하였다.

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Growth of superconducting thin film on metallic substrate by pulsed laser deposition (펄스 레이저 증착법에 의한 금속기판상 초전도 박막의 증착)

  • Jeong, Young-Sik;Lee, Sang-Yeol
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1298-1300
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    • 1997
  • 금속기판상 초전도 $YBa_2CU_3O_{7-{\delta}}$ (YBCO) 박막을 yttria-stabilized zirconia (YSZ) 완충막을 이용하여 in situ 펄스 레이저 증착법에 의해 증착하였다. YBCO 박막을 직접 금속기판에 증착하게 되면 YBCO 박막과 금속기판 사이의 계면에서 상호확산현상이 발생하기 때문에 이를 방지하기 위해 YSZ 완충막이 사용되었다. YSZ 완충막의 증착온도가 박막의 결정성과 전기적 특성에 미치는 영향을 알아보기 위해 YSZ 완충막은 여러 가지 온도로 증착되었다. YBCO 박막의 증착온도와 같은 온도로 YSZ 완충막을 증착했을 때보다 YBCO 박막의 증착온도보다 높은 온도로 YSZ 완충막을 증착했을 경우, 증착된 YBCO 박막은 x선 회절에 의해 c 축 방향으로 성장하였음을 알 수 있었고, 저항이 0이 되는 임계온도가 83K가 되는 실험 결과를 얻었다.

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Development of Metal Substrate with Multi-Stage Nano-Hole Array for Low Temperature Solid Oxide Fuel Cell (저온 고체산화물연료전지 구현을 위한 다층 나노기공성 금속기판의 제조)

  • Kang, Sangkyun;Park, Yong-Il
    • Journal of the Korean Ceramic Society
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    • v.42 no.12 s.283
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    • pp.865-871
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    • 2005
  • Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

Influences of Electrochemical Vapor Deposit Conditions Growth Rate and Characteristics of YSZ Thin Films (I) (YSZ 박막의 성장속도와 특성에 미치는 전기화학증착 조건의 영향(I))

  • 박동원;전치훈;강대갑;최병진;김대룡
    • Journal of the Korean Ceramic Society
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    • v.33 no.1
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    • pp.25-34
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    • 1996
  • Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates which were fabricated by different substrate thickness and porosity. Film growth rates decreased with increase on the substrate thickness and porosity and obeyed a parabolic rate law. Activa-tion energy calculated from the parabolic rate onstants was 69.9 kcal/mol. With increase on the deposition time, monoclinic phase was appeared and then disappeared. YSZ penetrated deeply into substrates when the EVD temperature decreased. Electrical conductivity of the films was 0.09 S/cm at 100$0^{\circ}C$ similar to the value of YSZ single crystal.

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