• Title/Summary/Keyword: x-ray film

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Alkaline Protease of a Genetically-Engineered Aspergillus oryzae for the Use as a Silver Recovery Agent from Used X-Ray Film

  • Samarntarn, Warin;Morakot Tanticharoen
    • Journal of Microbiology and Biotechnology
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    • v.9 no.5
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    • pp.568-571
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    • 1999
  • Aspergillus oryzae U1521, which was a genetically engineered strain, produced 1,000,600 U per g . glucose of extracellular alkaline protease within 72 h in a submerged fermentation. However, the alkaline protease was not detected during the first 24 h. Northern blot analysis indicated that the enzyme synthesis was repressed at the transcriptional level during the lag period. Both catabolite repression and pH of the growth medium significantly affected the enzyme production. Use of this enzyme as a silver recovery agent from used X-ray film was confirmed by experiments in the shake-flask scale.

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X-shaped Conjugated Organic Materials for High-mobility Thin Film Transistor

  • Choi, Dong-Hoon;Park, Chan-Eon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.310-311
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    • 2009
  • New X-shaped crystalline molecules have been synthesized through various coupling reactions and their electronic properties were investigated. They exhibit good solubility in common organic solvents and good self-film forming properties. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform and preferred orientations of molecules. They also exhibited high field effect mobilities in thin film transistor (TFT) and good device performances.

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Radiation Resistance Evaluation of Thin Film Transistors (박막트랜지스터의 방사선 내구성 평가)

  • Seung Ik Jun;Bong Goo Lee
    • Journal of the Korean Society of Radiology
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    • v.17 no.4
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    • pp.625-631
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    • 2023
  • The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

The Relative and Absolute Speed of Radiographic Screen-Film Systems (증감지(增感紙)-필름계(系)의 상대감도(相對感度)와 절대감도(絶對感度)에 관한 실험(實驗))

  • Huh, Joon;Lee, In-Ja
    • Journal of radiological science and technology
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    • v.16 no.1
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    • pp.67-80
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    • 1993
  • Recently, a large number of new screen-film systems have become available for use in diagnostic radiology. These new screens are made of materials generally known as rare-earth phosphors which have high x-ray absorption and high x-ray to light conversion efficiency compared to calcium tungstate phosphors. The major advantage of these new systesms is reduction of patient exposure due to their high speed or high sensitivity. However, a system with excessively high speed can result in a significant degradation of radiographic image quality. Therefore, th speed is important parameters for users of these system. Our aim of in this was to determine accurately and precisely the absolute speed and relative speeds of both new and conventional screen-film system. We determined the absolute speed in condition of BRH phantom beam qulity and the relative speed were measured by a split-screen technique in condition of BRH and ANSI phantom beam qulity. The absolute and the relative speed were determined for 8 kinds of screen-4 kinds of film in regular system and 7 kinds of screen-7 kinds of film in ortho system. In this study we could know the New Rx, T-MAT G has the highest film speed, also know Green system's stndard deviation of relative speed larger than blue system. It was realized that there were no relationship between the absolute speed and the blue system. It was realized that there were no relationship between the absolute speed and the relative speed in ortho or regular system.

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A Study on the Fabrication $Na_0.5$$K_0.5$$NbO_3$ Volatile Material Thin Film by Pulsed Laser Deposition and he Confirmation of C-axis Orientation by X-ray Diffraction (PLD 기법에 의한 $Na_0.5$$K_0.5$$NbO_3$ 휘발성 물질의 박막 제작 및 XRD에 의한 c축 배향성 확인에 관한 연구)

  • 최원석;김장용;장철순;문병무
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.4
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    • pp.269-273
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    • 2001
  • W fabricated thin film using Na$_{0.5}$K$_{0.5}$NbO$_3$ volatile material by pulsed laser deposition (PLD) and studied characterization from EM, XRD, P-E. The density and scale of droplet, which is the defect of PLD, was investigated by SEM but large droplet was not found. The degree of assemble oriented C-axis measured with X-ray diffraction suggests that this film oriented C-axis achieved by $\theta$-2$\theta$ scan and rocking curves shows good self-assemble phenomenon, finally $\phi$-scan does that all of the four directions of the lattice in film equals to those of substrate. P-E hysteresis loop shows residual remnant polarization or saturation polarization value, but it is applicable to memories.ies.

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Effects of Sputter Parameters on Electrochromic Properties of Tungsten Oxide Thin Films Grown by RF Sputtering

  • Nah, Yoon-Chae
    • Korean Journal of Materials Research
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    • v.21 no.12
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    • pp.703-707
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    • 2011
  • The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

Seperate Driving System For Large Area X-ray Detector In Radiology (대면적 X-ray 검출기를 위한 분할 구동 시스템)

  • Lee, D.G.;Park, J.K.;Kim, D.H.;Nam, S.H.;Ahn, S.H.;Park, H.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.388-391
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    • 2003
  • The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

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A Study on the Characteristics of Computerized Tomographic X-Ray Film (CT X선용(線用)필름의 특성(特性) 연구(硏究))

  • Lee, Man-Koo;Kang, Se-Sik;Lee, Jae-Wan
    • Journal of radiological science and technology
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    • v.10 no.1
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    • pp.49-53
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    • 1987
  • This thesis compared and analyzed the characteristics, centered on a characteristic curve, about X-ray computerized tomographic film generally used in Korea recently. The results were as follows: 1. Maximum gradient (gamma) was film A-2.19, film B-2.00, film C-1.92. 2. Latitude was confined within the limits of density 0.6-2.0 in all. 3. When we changed window center from 0 to 40, the difference of density, which was in 1.0, was film A-0.12, film B-0.16, fil m C-0.14. 4. When we changed window width from 0 to 500, the difference of density, which was in 1.0, was film A-0.06, film B-0.08, film C-0.05. 5. In the case of window width 50 and window center 20, latitude was 0.5-2.0, 0.5-2.2, 0.5-1.9 and gamma value was 1.74, 1.82, 1.72 respectively, 6. In the case of window width 80 and window center 30, latitude was 0.6-2.2, 0.6-2.3, 0.8-2.2 and gamma value was 2.0, 2.13, 1.95 respectively.

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Pretilt control of nematic liquid crystal by deposition of $SiO_x$ film (비정질 $SiO_x$ 박막을 이용한 nematic 액정의 선경사각 제어)

  • Park, Jeong-Hun;Son, Pil-Guk;Cha, Seong-Su;Kim, Jae-Chang;Yun, Tae-Hun
    • Proceedings of the Optical Society of Korea Conference
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    • 2006.07a
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    • pp.91-92
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    • 2006
  • Liquid crystal (LC) alignment on $a-SiO_x$ thin film was investigated by means of X-ray photoemission spectroscopy and optical transmittance as we varied the deposition temperature and the target-to-substrate distance. LC molecules can be aligned vertically on $a-SiO_x$ film when the stoichiometric parameter x of $a-SiO_x$ is smaller than 1.56, but they can be aligned homogeneously when x is larger than 1.56. We also found that whether liquid crystals can be aligned vertically or homogeneously on $a-SiO_x$ film can be predicted simply by measuring the change in optical transmittance by deposition of $a-SiO_x$ thin film layers.

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