• The Journal of Korean Academy of Prosthodontics
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• v.38 no.5
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• pp.704-723
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• 2000

This study was undertaken to evaluate the tensile bond strength of In-Ceram alumina core treat-ed by ion assisted reaction(IAR). Ion assisted reaction is a prospective surface modification technique without damage by a keV low energy ion beam irradiation in reactive gas environments or reactive ion itself. 120 In-Ceram specimens were fabricated according to manufacturer's directions and divided into six groups by surface treatment methods of In-Ceram alumina core. SD group(control group): sandblasting SL group: sandblasting + silane treatment SC group: sandblasting + Siloc treatment IAR I group: sandblasting + Ion assisted reaction with argon ion and oxygen gas IAR II group: sandblasting + Ion assisted reaction with oxygen ion and oxygen gas IAR III group: sandblasting + Ion assisted reaction with oxygen ion only For measuring of tensile bond strength, pairs of specimens within a group were bonded with Panavia 21 resin cement using special device secured that the film thickness was $80{\mu}m$. The results of tensile strength were statistically analyzed with the SPSS release version 8.0 programs. Physical change like surface roughness of In-Ceram alumina core treated by ion assistad reaction was evaluated by Contact Angle Measurement, Scanning Electron Microscopy, Atomic Force Microscopy; chemical surface change was evaluated by X-ray Photoelectron Spectroscopy. The results as follows: 1. In tensile bond strength, there were no statistically significant differences with SC group, IAR groups and SL group except control group(P<0.05). 2. Contact angle measurement showed that wettability of In-Ceram alumina core was enhanced after IAR treatment. 3. SEM and AFM showed that surface roughness of In-Ceram alumina core was not changed after IAR treatment. 4. XPS showed that IAR treatment of In-Ceram alumina core was enabled to create a new functional layer. A keV IAR treatment of In-Ceram alumina core could enhanced tensile bond strength with resin cement. In the future, this ion assisted reaction may be used effectively in various dental materials as well as in In-Ceram to promote the bond strength to natural tooth structure.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Radiation Oncology Journal
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• v.12 no.2
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• pp.243-252
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• 1994

The use of high dose rate remote afterloading system for the treatment of intraluminal lesions necessitates the need for a more accurate of dose distributions around the high intensity brachytherapy sources, doses are often prescribed to a distance of few centimeters from the linear source, and in this range the dose distribution is very difficult to assess. Accurated and optimized dose calculation with stable numerical algorithms by PC level computer was required to treatment intraluminal lesions by high dose rate brachytherapy system. The exposure rate from sources was calculated with Sievert integral and dose rate in tissue was calculated with Meisberger equation, An algorithm for generating a treatment plan with optimized dose distribution was developed for high dose rate intraluminal radiotherapy. The treatment volume becomes the locus of the constrained target surface points that is the specified radial distance from the source dwelling positions. The treatment target volume may be alternately outlined on an x-ray film of the implant dummy sources. The routine used a linear programming formulism to compute which dwell time at each position to irradiate the constrained dose rate at the target surface points while minimizing the total volume integrated dose to the patient. The exposure rate and the dose distribution to be confirmed the result of calculation with algorithm were measured with film dosimetry, TLD and small size ion chambers.

• Journal of the Korean Applied Science and Technology
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• v.24 no.2
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• pp.174-181
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• 2007

In this study, $SiO_2/poly(ethylene-co-vinyl$ alcohol)(EVOH) hybrid coating materials with gas barrier property could be produced using sol-gel method. The biaxially oriented polypropylene (BOPP) substrate with surface pretreatment was coated with the prepared hybrid sols containing various inorganic silicate component by a spin coating method. Crystallization behavior of the hybrids was investigated in terms of analysis of X-ray diffraction and cooling thermogram from DSC experiment. From the morphological observation of the $SiO_2/EVOH$ hybrid gel, it was confirmed that there existed an optimum content of inorganic silicate precursor, Tetraethylorthosilicate (TEOS), to produce hybrid materials with dense microstructure, exhibiting uniformly dispersed silica particles with average size below 100 nm. When TEOS was added at below or above the optimum content, particle clusters with large domain were observed, resulting in phase separation. This morphological result was found to be in good agreement with that of oxygen permeability of the hybrid coated films. In the case of film coated with hybrid prepared from addition of 0.01 - 0.02mol of TEOS, a remarkable improvement in barrier property could be obtained, however, with the addition of TEOS more than 0.04 mol, the barrier property was dramatically reduced because of phase separation and micro-crack formation on the film surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Imaging Science in Dentistry
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• v.32 no.2
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• pp.75-79
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• 2002

Purpose : To evaluate the effect of exposure time and image resolution on fractal dimension calculations for determining the optimal range of these two variances. Materials and Methods : Thirty-one radiographs of the mandibular angle area of sixteen human dry mandibles were taken at different exposure times (0.01, 0.08, 0.16, 0.25, 0.40, 0.64, and 0.80 s). Each radiograph was digitized at 1200 dpi, 8 bit, 256 gray level using a film scanner. We selected an Region of Interest (ROI) that corresponded to the same region as in each radiograph, but the resolution of ROI was degraded to 1000, 800, 600, 500, 400, 300, 200, and 100 dpi. The fractal dimension was calculated by using the tile-counting method for each image, and the calculated values were then compared statistically. Results: As the exposure time and the image resolution increased, the mean value of the fractal dimension decreased, except the case where exposure time was set at 0.01 seconds (α = 0.05). The exposure time and image resolution affected the fractal dimension by interaction (p<0.001). When the exposure time was set to either 0.64 seconds or 0.80 seconds, the resulting fractal dimensions were lower, irrespective of image resolution, than at shorter exposure times (α = 0.05). The optimal range for exposure time and resolution was determined to be 0.08- 0.40 seconds and from 400-1000 dpi, respectively. Conclusion : Adequate exposure time and image resolution is essential for acquiring the fractal dimension using tile-counting method for evaluation of the mandible.

• Journal of the Korean Society of Radiology
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• v.9 no.5
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• pp.323-329
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• 2015

This study is aimed at assessing whether dynamic wedge filters are appropriate to be used instead of physical wedge filters. The X-ray energy generated from linear accelerator is commercialize 6 MV and 10 MV. $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$ of physical wedge filter was irradiated by dose rate 100, 200, 300, 400, 500, and 600 MU/min for each angle and for comparison with a dynamic wedge filter, irradiate 96 times under the same conditions. The measurement conditions are as 100 cm source-film distance and $10{\times}10cm$ irradiated surface. A developed film was scanned and analyzed after a calibration through a dose analysis program and the dose rate was compared after calculating the standard deviation. Dynamic wedge filters make dose, scattered rays and treatment time reduced and very useful due to less irradiated doses to patients. The errors at each dose rate under the same conditions were irrelevant. Thus, treatment based on a high dose rate depending on the patient is expected to be feasible.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.49-49
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• 2009

최근 범세계적인 그린에너지 정책에 관련해 화석연료를 대체할 수 있는 수소, 풍력, 태양광 등의 대체 에너지에 대한 관심이 고조되고 있다. 이러한 여러 대체에너지 중에서도 태양광을 전기에너지로 변환하는 태양전지에 관한 연구가 집중되고 있다. 태양전지는 구조적으로 단순하고 제조 공정도 비교적 간단하지만, 보다 널리 보급되기 위해서는 경제성 향상이라는 문제점을 해결해야 한다. 이를 위해서는 기존의 실리콘 태양전지를 대체할 수 있는 신물질에 대한 연구가 필요하며, 그 중에서도 반도체 기술을 이용한 박막형 태양전지는 기존의 실리콘 태양 전지가 가지고 있는 고비용이라는 문제점을 극복할 수 있을 것으로 기대를 모으고 있다. 박막형 태양전지의 박막 재료로는 CIGS, CdTe 등이 연구되어지고 있지만, 아직까지는 기존의 실리콘 태양전지에 비해 에너지변환효율이 낮은 이유로 인해 실용화가 많이 이루어지지 못하고 있는 것이 사실이다. 이러한 박막형 태양전지의 재료들 중에서도 CdTe는 이종접합 박막형 태양전지에 흡광층으로 사용되는 것으로 상온에서 1.45eV 정도의 밴드갭(band gap) 에너지를 갖는 II-VI족 화합물반도체로써 태양광 스펙트럼과 잘 맞는 이상적인 밴드랩 에너지와 높은 광흡수도 때문에 박막형 태양전지로 가장 주목을 받고 있다. CdTe 박막의 제조 방법으로는 진공증착법(vacuum evaporation), 전착법(electrodeposition), 스퍼터링법(sputtering) 등이 있지만 본 연구에서는 스퍼터링법을 이용하여 박막을 증착하였다. 이상과 같이 증착된 CdTe 박막을 화학적기계적연마(CMP, chemical mechanical polishing) 공정을 적용시킴으로써, 태양전지의 에너지변환효율에 직접적인 영향을 끼칠 수 있는 CdTe 박막의 물리적, 전기적 특성들의 변화를 연구하기 위한 선행 연구를 진행하였다. 특히 본 연구에서는 CdTe 박막의 화학적 기계적 연마 특성을 분석하여 정규화를 통한 모델링을 수행하였다. 또한 화학적기계적연마 공정 전과 후의 표면 특성을 관찰하기 위해 SEM(scanning electron microscopy)과 AFM(atomic forced microscope)를 이용하였으며, 구조적 특성 관찰을 XRD(X-ray diffraction)를 사용하여 실험을 수행하였다.