• Title/Summary/Keyword: x-ray diffraction(XRD)

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Characterization of Fly Ash Produced from a Sewage Sludge Incineration Facility in Korea (국내 하수슬러지 소각시설에서 발생되는 비산재의 특성 분석)

  • Kim, Seong-beom;Lee, Wontae
    • Journal of Korean Society of Environmental Engineers
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    • v.38 no.2
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    • pp.96-99
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    • 2016
  • This study characterized fly ash produced from a sewage sludge incineration facility in Korea to determine if the byproducts can be utilized. All the incinerated sewage sludge was from a city in Korea. To characterize fly ash and to determine if it can be utilized, pH, water contents, elemental components, particle size, surface morphology, heavy metal compositions, and others were analyzed. In average, pH was 6.2, and water contents was about 5%. T-N and $T-P_2O_5$ were 3% and 24.5%, respectively. Particle size averaged 836 nm; surface morphology did not exhibit any significant results. X-ray diffraction (XRD) analysis results revealed that major components of the fly ash were $P_2O_5$, CaO, MgO, $K_2O$. Composition of heavy metals by the Korea Standard Methods for Waste Quality did not exceed the criteria for specified wastes in Korea.

Fabrication of ZnO incorporated TMA-A zeolite nanocrystals (ZnO를 담지한 TMA-A 제올라이트 나노결정의 제조)

  • Lee, Seok-Ju;Lim, Chang-Sung;Kim, Ik-Jin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.6
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    • pp.238-244
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    • 2007
  • Nano-sized ZnO crystals were successfully incorporated using ion exchange method in TMA-A zeolite synthesized by the hydrothermal method. The optimal composition for the synthesis of TMA-A zeolite was resulted in a solution of $Al(i-pro)_3$:2.2 TEOS:2.4 TMAOH:0.3 NaOH:200 $H_2O$. 0.3g of TMA-A zeolite and 5mol of $ZnCl_2$ solution were employed for the preparation of ZnO incorporated TMA-A zeolite. The ZnO incorporated TMA-A zeolite precursors, prepared from the process of mixing, stirring, centrifugal separation and drying, were calcined at temperatures from 400 to $600^{\circ}C$ for 3 h. The crystallization process of ZnO incorporated TMA-A zeolite was analyzed by X-ray diffraction (XRD). The Brunaur-Emett-Teller (BET) surface area of the ZnO incorporated TMA-A zeolite was measured. Subsequently, the morphology and the particle size depending on the temperature and time were observed using scanning electron microscopy(SEM), transmission electron microscopy(TEM) and particle size analyzer.

Physical and Chemical Characteristics of Waste Automotive Catalysts (자동차 폐촉매의 물리 화학적 특성)

  • Seo, Seong-Gyu;Moon, Joung-Sun
    • Journal of Korean Society of Environmental Engineers
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    • v.22 no.5
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    • pp.819-825
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    • 2000
  • The physico-chemical characteristics and the combustion activities of a waste automotive catalyst were carried out in this study. The physico-chemical characteristics of waste automotive catalyst was examined by EA(Elemental analysis), ICP-AES (Inductively coupled plasma-atomic emission spectrophotometer), and XRD(X-ray diffraction) analysis. Carbon deposit amount was higher in front brick than rear brick of catalyst, and increased with mileage. The content of Pt. Pd and Rh in waste automotive catalyst was different from the car manufacturing company. The combustion activities of waste automotive catalyst were investigated for acetaldehyde as a model VOC in a fixed bed reactor at atmospheric pressure. The catalytic activity of rear brick for acetaldehyde combustion was better than front brick of waste automotive catalyst. The catalytic activity of waste automotive catalyst for acetaldehyde combustion decreased with mileage. The linear relationship between catalytic activity and mileage was negative and has a very excellent correlation. Finally, the waste automotive catalyst has a good catalytic activity for acetaldehyde combustion. and can be used to control of small emission source.

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The Study on Structural Change and Improvement of Electrochemical Properties by Co-precipitation Condition of Li[Ni0.8Co0.15Al0.05]O2 Electrode (Li[Ni0.8Co0.15Al0.05]O2 전극의 공침 조건을 통한 구조적 변화와 전기적 특성의 향상 고찰)

  • Im, Jung-Bin;Son, Jong-Tae
    • Journal of the Korean Electrochemical Society
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    • v.14 no.2
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    • pp.98-103
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    • 2011
  • [ $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ ]cathode material for lithium secondary battery is obtained using co-precipitation method. To determine the optimal metal solution concentration value, the CSTR coprecipitation was carried out at various concentration values(1-2 mol/L). The surface morphology of coated samples was characterization by SEM(scanning electron microscope) and XRD (X-Ray Diffraction)analyses. Impedance analysis and cyclic voltammogram presented that internal resistance of the cell was dependent upon the concentration of metal solution. such data is very helpful in determining the optimal content of metal solution concentration to enhancing electrochemical property by adjusting powder size distribution and crystal structure.

The Analysis of the Discharging Characteristics and MgO protective layer by MgO Evaporation Rates for High-Efficiency PDP (MgO 증착률에 따른 PDP 보호막 물성 및 방전 특성 분석)

  • Kim, Yong-Jae;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
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    • v.16 no.3
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    • pp.181-186
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    • 2007
  • We have investigated and analyzed the effects of the evaporation rate of MgO films on the MgO properties and the discharge characteristics of a plasma display panel(PDP). The MgO properties such as the crystal orientation, the surface roughness, the film structure, and cathode-luminescence (CL) spectra were inspected using XRD (X-ray diffraction), AFM(atomic force microscopy). And the discharging characteristics of the PDP such as the firing voltage, discharging current, and luminescence were measured using a vacuum chamber with oscilloscope (TDS 540C), current probe (TCP-312A), color meter (CS-100A) and etc. From the experiments results we confirmed the optimum evaporation rate at $5{\AA}/sec$, the MgO properties were shown to be strongly dependent on the evaporation rate, and the MgO properties had an effecton the optical and electrical characteristics. In other words, if the evaporation rates increase than $5{\AA}/sec$, the intensity of (200) orientation and cathode-luminescence (CL) spectra reduce, and the firing vlotage was increased. So the luminuous efficiency grows worse.

ZnO thin films with Cu, Ga and Ag dopants prepared by ZnS oxidation in different ambient

  • Herrera, Roberto Benjamin Cortes;Kryshtab, Tetyana;Andraca Adame, Jose Alberto;Kryvko, Andriy
    • Advances in nano research
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    • v.5 no.3
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    • pp.193-201
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    • 2017
  • ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

Effects of substitution with La and V in $Bi_4Ti_3O_{12}$ thin film by MOCVD using ultrasonic spraying (초음파분무 MOCVD법에 의한 $Bi_4Ti_3O_{12}$ 박막의 제조와 La과 V의 Co-Substitution 에 의한 효과)

  • 김기현;곽병오;이승엽;이진홍;박병옥
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.6
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    • pp.272-278
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    • 2003
  • $Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

Characteristics of Free-Standing GaN Substrates grown by Hydride Vapor Phase Epitaxy (Hydride Vapor Phase Epitaxy 법으로 성장된 Free-Standing GaN 기판의 특성에 관한 연구)

  • Kim, Hwa-Mok;Choe, Jun-Seong;O, Jae-Eung;Yu, Tae-Gyeong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.3
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    • pp.14-19
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    • 2000
  • Free-standing GaN single crystal substrates have been obtained by growing thick GaN epitaxial layers on (0001) sapphire substrates using hydride vapor phase epitaxy (HVPE) method. After growing the GaN thick film of 200 ${\mu}{\textrm}{m}$, a free-standing GaN with a size of 10 mm $\times$10 mm were obtained by mechanical polishing process to remove sapphire substrate. Crack-free GaN substrates have been obtained by GaCl pre-treatment prior to the growth of GaN epitaxial layers. Properties of free-standing GaN substrates have been compared with those of lateral epitaxial overgrowth (LEO) GaN films by double-crystal x-ray diffraction (DC-XRD), cathodoluminescence (CL) and photoluminescence (PL) measurements.

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Influence of porosity and cement grade on concrete mechanical properties

  • Huang, Jiandong;Alyousef, Rayed;Suhatril, Meldi;Baharom, Shahrizan;Alabduljabbar, Hisham;Alaskar, Abdulaziz;Assilzadeh, Hamid
    • Advances in concrete construction
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    • v.10 no.5
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    • pp.393-402
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    • 2020
  • The given research focuses on examining the effect of relatively humidity (RH) and curing temperature on the hydrates as well as the porosity of calcium sulfoaluminate (CSA) cement pastes. Numerous tests, which consist of mercury intrusion porosimetry (MIP), thermosgravi metric (TG) and X-ray diffraction (XRD) were conducted. Various characterization techniques which include, scanning electron microscopy, Fourier transform microscopy along with X-ray diffraction evaluations were conducted on the samples to examine phase formation and crystallinity, morphology and microstructure along with bond formations and functional groups, respectively. During long-term study, the performance of concrete which consisted of limestone and flash-calcined was close to those from standard Portland cement concrete. Traditional classifications and methods of corrosion were widely used for the assessment of steel in concrete which may get employed to concrete which contains LC3 to recalibrate the range of polarization resistance for passitivity condition. For example, there is up to 79.5% and 146% respective flexural and compressive strengths. Moreover, they developed more advance electrical and thermo-mechanical performance with a substantial reduction in absorption of water of close to 400%. These advantages allow this research crucial to evaluate how these methods can be applied. Additionally, the research evaluates developed and more advanced cement preservation and repair techniques. The conclusion suggests concerted efforts by various stakeholders such as policy makers to enable low-carbon rates.

Structural and Optical Properties of SnS Thin Films Deposited by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 제조한 SnS 박막의 구조적 및 광학적 특성)

  • Hwang, Donghyun
    • Journal of the Korean institute of surface engineering
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    • v.51 no.2
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    • pp.126-132
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    • 2018
  • SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.