• 제목/요약/키워드: without oxygen.

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광자기 디스크의 기록 및 자기적 특성에 산소가 미치는 영향 (Effect of Oxygen on the Magnetic and Recording Characteristics of Magneto-Optical Disk)

  • 최건
    • 한국자기학회지
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    • 제3권3호
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    • pp.229-233
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    • 1993
  • 광자기 디스크의 제조시 기록막내부의 산소함량에 따른 기록 및 자기적 특성의 변화를 연구하였다. 기록막내의 산소함량 변화는 반응성 스퍼터링에 의해 조절하였으며 스퍼터링 전과정 동안 산소의 거동을 in-situ 잔류가스분석기로 조사하였다. 산소함량의 증가에 따라 보자력은 감 소하였으나 수직이방성 및 수직 각형비등은 변화하지 않았다. 대부분의 첨가된 산소는 스퍼터링 과정중 소모되어 Tb원자와 안정한 산화물을 형성하여 자기적 조성의 변화를 초래하였지만 임계기 록크기와 임계외부자계크기에만 약간의 변화를 가져왔을 뿐 디스크의 기록신호잡음비에는 별로 영향을 미치지 않았다. 또한 디스크의 신뢰도면에서도 크게 감소하지 않았다.

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Polycarbonate/Metal Salt 막의 산소분리특성에 미치는 비용매와 금속염 농도의 영향 (Effect of Nonsolvent and Metal Salt Concentration on Oxygen Separation Performances of Polycarbonate/Metal Salt Membrane)

  • 서상훈;이우태
    • 한국산업융합학회 논문집
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    • 제4권1호
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    • pp.61-69
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    • 2001
  • Polycarbonate(PC) membranes for oxygen enrichment from air were prepared by the wet phase inversion method. In order to improve oxygen separation performances of the PC membrane, the effect of the added ethanol(nonsolvent) and $CuCl_2$(metal salt) concentration in the casting solution on morphology, oxygen permeability ami $O_2/N_2$ separation factor of the membrane was studied. In addition, tensile strength and elongation at break of the membrane were investigated. An asymmetric membrane with a dense top layer and a porous sublayer was obtained. The thickness of the dense top layer decreased with increasing amount of nonsolvent additive. Compared with pure PC membrane without additive(metal salt), the oxygen permeability and $O_2/N_2$ separation factor of the $PC/CuCl_2$ membrane are significantly improved. The oxygen permeability and $O_2/N_2$ separation factor is $5.25{\times}10^{-9}cm^3(STP){\cdot}cm/cm^2{\cdot}sec{\cdot}cmHg$ and 4.5, respectively. This improvement might be due to good interaction between metal salt and oxygen.

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산소 플라즈마 처리에 따른 유기 발광 다이오드의 전기적 특성 (Electrical Properties of Organic light-emitting Diode with Oxygen Plasma Treatment)

  • 김승태;홍진웅
    • 전기학회논문지
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    • 제62권11호
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    • pp.1566-1570
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    • 2013
  • In this paper, we analyzed the electric characteristics of the OLEDs device of which anode ITO has been treated with the oxygen plasma. We fabricated the basic three-layer structure (ITO / AF / $Alq_3$ / $Cs_2CO_3$ / Al) device, analyzed how the oxygen plasma treatments of the ITO surface affects to the electrical characteristics of OLEDs. We also produced a four-layer structure device (ITO / AF / TPD / $Alq_3$ / $Cs_2CO_3$ / Al) with the oxygen plasma treatment. From the comparative analysis to the devices, we confirmed following results. The three-layer structure OLEDs device with oxygen plasma treatment has better characteristics than the device without the treatments; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 151 [%], 126 [%], and 175[%], respectively. Also, the electric characteristics of the four-layer structure device with oxygen plasma treatment are improved comparing to the characteristics of the three-layer structure device with oxygen plasma treatment; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 144 [%], 115 [%], and 124[%], respectively.

Oxygen flooding에 의해 왜곡된 SIMS depth profile의 보정 (Correction of Secondary ion Mass Spectrometry depth profile distorted by oxygen flooding)

  • 이영진;정칠성;윤명노;이순영
    • 한국진공학회지
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    • 제10권2호
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    • pp.225-233
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    • 2001
  • Oxygen flooding을 이용한 Secondary ion Mass Spectrometry(SIMS) 분석에 있어서 표면에 산화막이 있을 때 발생하는 SIMS depth profile의 왜곡현상에 대한 원인을 분석하고 이를 보정하였다. 이러한 왜곡현상은 표면 산화막에서와 Si 매질에서의 sputter rate이 다른 데서 발생하는 깊이 보정 오류와 상대감도인자(relative sensitivity factor, RSF)가 다른 데서 발생하는 농도보정 오류로부터 발생됨이 밝혀졌다. 깊이보정 오류를 바로잡기 위하여 $N^a+$ 이온을 산화막과 Si 매질의 계면에 대한 marker로 사용하였으며 산화막 두께는 SEM 및 XPS로 측정하였다. 산화막과 Si 매질에서의 sputter rate 및 RSF의 차이는 주로 oxygen flooding이 유발한 산화막 형성시의 부피팽창에 의한 것으로 해석되었으며 이를 보정한 depth profile은 oxygen flooding없이 분석한 경우와 거의 동일한 결과를 보여주었다.

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V2O5/TiO2 촉매의 선택적 환원촉매반응에서 격자산소의 역할 (The Role of Lattice Oxygen in the Selective Catalytic Reduction of NOx on V2O5/TiO2 Catalysts)

  • 하헌필;최희락
    • 한국재료학회지
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    • 제16권5호
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    • pp.323-328
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    • 2006
  • In situ electrical conductivity measurements on $V_2O_5WO_3/TiO_2$ catalysts were carried out at between 100 and $300^{\circ}C$ under pure oxygen, NO and $NH_3$ to investigate the reaction mechanism for ammonia SCR (selective catalytic reduction) de NOX. The electrical conductivity of catalysts changed irregularly with supply of NO. It was, however, found that the electrical conductivity change with ammonia supply was regular and the increase of electrical conductivity was mainly caused by reduction of the labile surface oxygen. The electrical conductivity change of catalysts showed close relationship with the conversion rate of NOx. Variation of conversion rate in atmosphere without gaseous oxygen also showed that labile lattice oxygen is indispensable in the initial stage of the de NOx reaction. These results suggest that liable lattice oxygen acts decisive role in the de NOx mechanism. They also support that de NOx reaction occurs through the Eley?Rideal type mechanism. The amount of labile oxygen can be estimated from the measurement of electrical conductivity change for catalysts with ammonia supply. This suggests that measurement of the change can be used as a measure of the de NOx performance.

고 자장 기능적 MR 영상을 이용한 뇌 운동 영역에서 산소 주입에 따른 활성화 영역에 관한 연구 (Cerebral Activation Area Following Oxygen Administration using a 3 Tesla Functional MR Imaging)

  • 구은회;권대철
    • 대한인간공학회지
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    • 제24권4호
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    • pp.47-53
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    • 2005
  • This study aim to investigate the effects of supply of oxygen enhances cerebral activation through increased activation in the brain and using a 3 Tesla fMRI system. Five volunteers (right handed, average age of 21.3) were selected as subjects for this study. Oxygen supply equipment that provides 30% oxygen at a constant rate of 15L/min was given using face mask. A 3 Tesla fMRI system using the EPI BOLD technique, and three-pulse sequence technique get of the true axial planes scanned brain images. The author can get the perfusion images of the brain by oxygen inhalation with susceptibility contrast EPI sequence at the volunteers. Complex movement consisted of a finger task in which subjects flexed and extended all fingers repeatedly in union, without the fingers touching each other. Both task consisted of 96 phases including 6 activations and rests contents. Post-processing was done on MRDx software program by using cross-correlation method. The result shows that there was an improvement in performance and also increased activation in several areas in the oxygen method. These finding demonstrates that while performing cognitive tasks, oxygen administration was due to increase of cerebral activation.

자동차 배기계용 산소센서 내부유동 특성 평가 (Evaluation of Inner Flow Characteristics of Oxygen Sensor for Vehicle Exhaust System)

  • 한대광;서호철;이정재;강정호;한승호
    • 한국기계가공학회지
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    • 제11권2호
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    • pp.47-54
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    • 2012
  • An oxygen sensor installed in vehicle exhaust systems enables to measure the amount of oxygen in the exhaust gas, in which the measured data are collected and analyzed in ECU(Engine Control Unit). The oxygen sensor is exposed to the high speed exhaust gas at high temperature circumstance, so that protection caps are required not only to protect the susceptible measuring part, but also to provide the real time measurement without time delay. In this study, a new oxygen sensor with one protection cap was proposed, and the CFD analysis was carried out in order to compare the performance characteristics, such as flow speed and ratio of AOA(Age of Air), for the conventional and new oxygen sensor. The numerical results of CFD analysis provided the flow speed of 1.34m/s and the ratio of AOA of 3.43. The similar features obtained from the numerical results showed that the new oxygen sensor guarantees the same performance characteristics of the conventional ones.

Effect of Acvated Oxygen Plasma on the Crystallinity and Superconductivity of $Yba_2Cu_3-O_{7-x}$ Thin Films Prepated by Reactive Co-evaporation method

  • Chang, Ho-Jung;Kim, Byoung-Chul;Akihama, Ryozo;Song, Jin-Tae
    • 한국재료학회지
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    • 제4권3호
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    • pp.280-286
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    • 1994
  • As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

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산소분압의 변화에 따른 ITO/polymeric 박막의 특성 (Characteristics of ITO/polymeric Films with Change of Oxygen Partial Pressure)

  • 신성호;김현후
    • 한국전기전자재료학회논문지
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    • 제17권8호
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    • pp.846-851
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    • 2004
  • Transparent conducting indium tin oxide (TC-ITO) thin films on polymeric substrates have been deposited by a dc reactive magnetron sputtering without heat treatments. The polymeric substrates are acryl (AC), poly carbornate (PC), and polyethlene terephthalate (PET) as well as soda lime glass is also used to compare with the polymeric substrates. Sputtering parameters are an important factor for high quality of TC-ITO thin films prepared on polymeric substrates. Furthermore, the material, electrical and optical properties of as-deposited ITO films are dominated by the ratio of oxygen partial pressure. As the experimental results, the surface roughness of ITO films becomes rough as the oxygen partial pressure increases. The electrical resistivity of as-deposited ITO films decreases initially, and then increases with the increase of oxygen partial pressure. The optical transmittance at visible wavelength for all polymeric substrates is above 82 %.

고농도 붕소의 도핑된 실리콘 웨이퍼에서의 산소석출에 관한 연구 (A Study on Oxygen Precipitation in Heavily Boron Doped Silicon Wafer)

  • 윤상현;곽계달
    • 한국전기전자재료학회논문지
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    • 제11권9호
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    • pp.705-710
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    • 1998
  • Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

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