• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.69-69
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• 2003

최근 trench capacitor, isolation trench, micro-electromechanical system(MEMS), micro-opto-electromechanical system(MOEMS)등의 다양한 기술에 적용될 고종횡비(HAR) 실리콘 식각기술연구가 진행되어 지고 있다. 이는 기존의 습식식각시 발생하는 결정방향에 따른 식각률의 차이에 관한 문제와 standard reactive ion etching(RIE) 에서의 낮은 종횡비와 식각률에 기인한 문제점들을 개선하기 위해 고밀도 플라즈마를 이용한 건식식각 장비를 사용하여 고종횡비(depth/width), 높은 식각률을 가지는 이방성 트랜치 구조를 얻는 것이다. 초기에는 주로 HBr chemistry를 이용한 연구가 진행되었는데 이는 식각률이 낮고 많은양의 식각부산물이 챔버와 시편에 재증착되는 문제가 발생하였다. 또한 SF6 chemistry의 사용을 통해 식각률의 향상은 가져왔지만 화학적 식각에 기인한 local bowing과 같은 이방성 식각의 문제점들로 인해 최근까지 CHF3, C2F6, C4F8, CF4등의 첨가가스를 이용하여 측벽에 Polymer layer의 식각보호막을 형성시켜 이방성 구조를 얻는 multi_step 공정이 일반화 되었다. 이에 본 연구에서는 SF6 chemistry와 소량의 02/HBr의 첨가가스를 이용한 single_step 공정을 통해 공정의 간소화 및 식각 프로파일을 개선하여 최적의 HAR 실리콘 식각공정 조건을 확보하고자 하였다.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.36-38
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• 2013

Eight sample panels using an indium tin oxide(ITO)-coated glass substrate were fabricated, with barrier ribs formed of 55 ${\mu}m$ height and 10 ${\mu}m$ width. The upper and lower substrates were designed with the same panel condition, so a cell gap of 110 ${\mu}m$ was obtained. The charged particles in a cell consisted of $TiO_2$ (for white color) or carbon black (black color), negative or positive charge control agents, and a polymer. The average diameter of the two types of particles was commonly 10 ${\mu}m$, and their q/m value was -4.5 ${\mu}C/g$ and +4.5 ${\mu}C/g$, respectively. The electrically opposite particles mixed by an agitator were loaded into their cells by a simple particle-loading method. The discharging process proceeded at a humidity of 80% and a temperature of $30^{\circ}C$. Reflectivity was measured depending on discharging time, and a hysteresis curve by bias voltage obtained for comparison between the neutralized and non-neutralized panel, in which the superior optical property of the neutralized panel was ascertained.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.255-262
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• 2011

This paper proposes a grid-tied power conditioning system for fuel cell, which consists of three-phase current-fed DC-DC converter and three-phase PWM inverter. The three-phase current-fed DC-DC converter boosts fuel cell voltage of 26-48 V up to 400 V with zero-voltage switching (ZVS) scheme, while the three-phase PWM(Pulse Width Modulation) inverter controls the active and reactive power supplied to the grid. The operation of the proposed power conditioning system with fuel cell model is verified through simulations with PSCAD/EMTDC software. The feasibility of hardware implementation is verified through experimental works with a laboratory prototype with 1.2 kW proton exchange membrane (PEM) fuel cell stack. The proposed power conditioning system can be commercialized to interconnect the fuel cell with the power grid.

• The Transactions of the Korean Institute of Power Electronics
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• v.11 no.2
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• pp.149-158
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• 2006

A soft-switching scheme for the PWM boost converter, ZCT (Zero current transition : ZCT) boost converter Is newly proposed to obtain the desirable features of both the conventional BWM boost and resonant converters such as easy of control, reduced switching losses and stresses, an4 low EMI. In order to achieve the soft-switching action, the proposed scheme employs an auxiliary circuit, which is added to the conventional boost converter and used to achieve soft-switching for both the main switch and the output diode while not incurring any additional losses due to auxiliary circuit itself. The basic operations, in this paper, we discussed and design guidelines are presented. Through a 100kHz, 60-W prototype, the usefulness of the proposed scheme is verified.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.4
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• pp.298-305
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• 2012

This paper proposes a soft switching boost converter with an auxiliary resonant circuit. The auxiliary resonant circuit is added to a general boost converter and that is composed of one switch, one diode, one inductor and two capacitors. The resonant network helps the main switch to operate with a zero voltage switching(ZVS) and auxiliary switch also operates under the zero voltage and zero current conditions. The soft switching range is extended by the auxiliary switch and it is possible to control the proposed converter with a pulse width modulation(PWM). The ZVS and ZCS techniques make switching losses decreased and efficiency of the system improved. A theoretical analysis is verified through the simulation and experiment.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.4
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• pp.273-280
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• 2018

This paper proposes a zero-voltage-transition pulse-width modulation (PWM) DC-DC converter that uses a new active-snubber-cell. The converter main switch can be turned on and off with ZVS, while the snubber switch is turned on with ZCS and turned off with ZVS. Other semiconductor devices are operated under the soft-switching condition. Normal PWM control can be used, the proposed active-snubber-cell does not impose any additional voltage and current stresses. The active-snubber-cell is suitable for high-power applications due to its easy integration into interleaved converters. This paper discusses the operation of the converter, presents some design guidelines, and provides the results of an experiment with a 100 kHz and 1 kW prototype. A peak efficiency of 97.8% is recorded.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.284-288
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• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2221_2222
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• 2009

본 논문에서는 BLDC 운전 중 각 상의 결상 사고에 따른 토크 및 속도의 최적화에 대해 연구하였다. BLDC 모터의 구동을 위하여 ATmega16이 사용되었으며 제어기법으로는 PWM(Pulse Width Modulation) 기법이 사용된다. 속도 제어는 Hall Sensor의 검출 속도에 따라 Duty비를 제어하여 이루어지며 회전자 위치는 Hall Sensor 검출 방식을 통하여 이루어진다. 이러한 BLDC 모터를 이용하여 예기치 못한 결상 상황의 발생 시 토크의 감소로 인한 급제동에 대비하여 부하에 상응하는 토크를 최대한 낼 수 있도록 알고리즘을 구현하였다.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1783-1786
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• 2007

The copper film coated by Sn is often used in various applications such as LCD, Mobile Phone and etc. Especially, when the film is used as tape carrier package(TCP) of LCD panel, the film is repeatedly applied by mechanical or(and) thermal stress and then is often failed. Therefore, to guarantee the reliability of the electrical devices using the film, the tensile and fatigue characteristics of the film are important. In this study, to obtain the tensile and fatigue characteristics of the film, the specimen was fabricated by etching process to make a smooth specimen of 2000 ${\mu}m$ width, 8000 ${\mu}m$ length and 15.26 ${\mu}m$ thickness. The 2 kinds of specimen were fabricated by other manufacturing process. These specimens had values of Young's modulus(80.2GPa) lower than literature values(108${\sim}$145GPa) for bulk values, but had high values of the yield and ultimate strength as 317MPa and 437MPa, respectively. And fatigue test of load-control with 20Hz frequency was performed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.3
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.