• Korean Chemical Engineering Research
• /
• 제60권2호
• /
• pp.277-281
• /
• 2022

The wetting dynamics of water droplets dispensed on the surface of dry and wet hydrophilic membranes were investigated experimentally from a microscale point of view. By using a high-speed, white-beam x-ray microimaging (WXMI) synchrotron, consecutive images displaying the dynamic motions of the droplets were acquired. Through analyzing the characteristics observed, it was found that the dry hydrophilic membrane showed local hydrophobicity at a certain point during the absorption process with apparent contact angles greater than 90. While on the other hand, the apparent contact angles of a water droplet absorbing into the wet membrane remained less than 90 and showed total hydrophilicity. The observations and interpretation of characteristics that affect the contact, wetting, recoiling, and dynamic behaviors of droplets are significant for controlling liquid droplet impingement in a desired manner.

• 한국정밀공학회지
• /
• 제19권5호
• /
• pp.149-158
• /
• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• 펄프종이기술
• /
• 제35권2호
• /
• pp.26-32
• /
• 2003

For the purpose of manufacturing water-resistant corrugated board boxes for agricultural products in the cold chain system, the effects of fiber types, wet strength agents and a moisture-proof chemical on the properties of the base papers were investigated first. PAE(polyamide amine epichlorohydrin) showed better performance than MF(melamine formalde-hyde) over broad stock pH ranges, which was prefered as wet strength agent for the paper grade. When short fibers(AOCC, KOCC) were mixed with long fiber(UKP) in certain ratios, some physical properties of the paper made with mixed fibers were similar to those of the paper made with UKP only. Paper containing AOCC showed the biggest increase in water resistance when PAE was added to the stock. Synergistic effects in moisture-proof and some mechanical properties of paper were appeared when PAR was added internally, together with the coating of a moisture proof chemical on the sheets.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
• /
• pp.111-115
• /
• 2011

Surface Texturing is an essential process for high efficiency in multi-crystalline silicon solar cell. In order to reduce the reflectivity, there are two major methods; proper surface texturing and anti-reflection coating. For texturization, wet chemical etching is a typical method for multi-crystalline silicon. The chemical solution for wet etching consists of HF, $NHO_3$, DI and $CH_3COOH$. We carried out texturization by the change of etching time like 15sec, 30sec, 45sec, 60sec and measured the reflectivity of textured wafers. As making the silicon solar cells, we obtained the conversion efficiency and relationship between texturing condition and solar cell characteristics. The reflectivity from 300nm to 1200nm was the lowest with 15 sec texturing time and 60 sec texturing time showed almost same reflectivity as bare one. The 45 sec texturing time showed the highest conversion efficiency.

• 한국펄프종이공학회:학술대회논문집
• /
• 한국펄프종이공학회 2001년도 추계학술발표논문집
• /
• pp.183-199
• /
• 2001

Alternative way of shaping fibers suitable for papermaking was introduced. Impact refining, which was done simply by hitting wet fibers with a metal weight vertically, was intended to keep the fibers from shortening and to cause mostly internal fibrillation. Virgin chemical pulp, its recycled one and OCC were used in the experiment. It was noticed from the experiment that impact refining on virgin chemical pulp kept the fiber length and Increased bonding properties greatly, However, in the recycled fibers from the chemical pulp, fiber length and bonding properties were decreased. In OCC, which seems to contain fractions of semi-chemical pulp and mechanical pulp (GP), and which is recycled pulp from corrugated boxes, fiber length and bonding properties were decreased disastrously. We believe recycled cellulosic fibers (recycled chemical pulp and OCC in this case), which went through hornification, were less resistant to the mechanical impact than virgin chemical pulp. For virgin chemical pulp, impact refining allowed no significant fiber length shortening, high WRV, and high mechanical strength.

• Korean Chemical Engineering Research
• /
• 제47권3호
• /
• pp.292-302
• /
• 2009

페놀 습식산화에 미치는 반응온도($150{\sim}250^{\circ}C$), 산소분압(25.8~75.0 bar) 및 초기 pH(1.0~12.0)의 영향을 10 g/l의 페놀 초기농도를 사용하여 조사하였다. 습식산화속도는 화학적 산소요구량 COD를 이용하여 산출하였으며 반응 중간 생성물들을 고성능액체크로마토그래피를 사용하여 측정하였다. 습식산화 중 페놀 분해속도는 페놀에 대하여 1차 반응차수를 나타냈으며, COD 변화는 lumped 모델로 잘 묘사할 수 있었다. 금속이온($Cu^{2+}$, $Fe^{2+}$, $Zn^{2+}$, $Co^{2+}$, $Ce^{3+}$) 균일촉매의 습식산화 중 페놀 분해속도 및 COD 제거속도에 미치는 영향도 조사하였다. 페놀 분해속도 및 COD 제거속도는 $CuSO_4$를 사용한 촉매습식산화에서 가장 크게 나타났으며 촉매농도를 증가시킴에 따라 증가하였다. 습식산화 중 생성되는 개미산의 분해속도는 반응온도 및 $CuSO_4$ 농도를 증가시킴에 따라 증가하였다. 난분해성 생성물 초산의 최종농도는 반응온도를 증가시킴에 따라 증가하였으나 $CuSO_4$ 농도를 증가시킴에 따라 감소하였다.

• 한국펄프종이공학회:학술대회논문집
• /
• 한국펄프종이공학회 2003년도 추계학술발표논문집
• /
• pp.306-330
• /
• 2003

The wet-end dynamics of a paper mill was analyzed to characterize its dynamic behavior during the grade change. The model representing the wet-end section is developed based on the mass balance relationships written for the simplified wet-end white water network. From the linearization of the dynamic model, higher-order Laplace transfer functions were obtained followed by the reduction procedure to give simple lower-order models in the form of $1^{st}$-order or $2^{nd}$-order plus dead times. The dynamic response of the wet-end is influenced both by the white water volume and by the level of wire retention. Effects of key manipulated variables such as the thick stock flow rate, the ash flow rate and the retention aid flow rate on the major controlled variables were analyzed by numerical simulations. The simple dynamic model developed in the present study can be effectively used in the operation and control.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 하계종합학술대회논문집
• /
• pp.398-400
• /
• 1998

In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
• /
• pp.157-162
• /
• 2005

The wafer's size has been increased up to 300mm according as the devices have been integrated sophisticatedly. For this process to make 300mm-wafer, it is required strict level which removes the particulates on the surface of wafer. Therefore we need new type wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is very important to control the temperature and the concentration of chemical wet-stat ion. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical in cleaning process, but also it is difficult to make fit quantity and temperature. We propose new chemical supply system, which overcomes the problems via analysis of fluid and thermal transfer on chemical supply system,

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
• /
• pp.123-128
• /
• 2004

Semiconductor Wet Station has a very important place in semiconductor process. It is important that to discharge chemical with fit concentration and temperature using chemical supply system for clean process. The chemical supply system which is used currently is not only difficult to make a fit mixing rate of chemical which is need in clean process, but also difficult to make fit concentration and temperature. Moreover, it has high stability but it is inefficient spatially because its volume is great. We propose In-line System to improve system with implement analysis of fluid and thermal transfer on chemical supply system and understand problem of system.