• Title/Summary/Keyword: wearable structure

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Electric Power Generation from Piezoelectric Ceramics (압전 세라믹을 이용한 전기 발전)

  • Paik, Jong-Hoo;Shin, Bum-Seung;Lim, Eun-Kyeong;Kim, Chang-Il;Im, Jong-In;Lee, Young-Jin;Choi, Byung-Hyun;Kim, Dong-Kuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.304-304
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    • 2006
  • One method of Electric Power Generation is to use piezoelectric materials, which form transducers that are able to interchange electrical energy and mechanical force or strain. This study describes the fabrication and properties of piezoelectric transducers for Power Generation application. The structure of the transducers was ceramic-metal-ceramic 3-layered parallel type The center metal layer of phosphorous bronze was bonded by two piezoelectric layers of which have sputtered Ag/Cu(or Ni/Cu) electrode layers on both sides.. The Energy generated by the vibration of piezoelectric transducers Can be achieved by adjusting a suitable piezoelectric constant and mechanical structures. The piezoelectric material used in this application showed the electrical properties of r=4400, $d_{33}\;=\;750\;(10^{-12}\;m/V)$, $d_{31}\;=\;-300\;(10^{-12}\;m/V)$, $k_{33}\;=\;71%$, $Qm\;=\;85$, $T_c\;=\;210^{\circ}C$.

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Study on Structural Changes and Electromagnetic Interference Shielding Properties of Ti-based MXene Materials by Heat Treatment (열처리에 의한 Ti 기반 MXene 소재의 구조 변화와 전자파 간섭 차폐 특성에 관한 연구)

  • Han Xue;Ji Soo Kyoung;Yun Sung Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.111-118
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    • 2023
  • MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti3C2Tx and Ti2CTx are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti3C2Tx and Ti2CTx films were prepared by vacuum filtration using Ti3C2Tx and Ti2CTx dispersions synthesized by interlayer metal etching and centrifugation of Ti3AlC2 and Ti2AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti3C2Tx and Ti2CTx films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

Effect of the Configuration of Contact Type Textile Electrode on the Performance of Heart Activity Signal Acquisition for Smart Healthcare (스마트 헬스케어를 위한 심장활동 신호 검출용 접촉식 직물전극의 구조가 센싱 성능에 미치는 영향)

  • Cho, Hyun-Seung;Koo, Hye-Ran;Yang, Jin-Hee;Lee, Kang-Hwi;Kim, Sang-Min;Lee, Jeong-Hwan;Kwak, Hwy-Kuen;Ko, Yun-Su;Oh, Yun-Jung;Park, Su-Youn;Kim, Sin-Hye;Lee, Joo-Hyeon
    • Science of Emotion and Sensibility
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    • v.21 no.4
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    • pp.63-76
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    • 2018
  • The purpose of this study was to investigate the effect of contact type textile electrode structure on heart activity signal acquisition for smart healthcare. In this study, we devised six contact type textile electrodes whose electrode size and configuration were manipulated for measuring heart activity signals using computerized embroidery. We detected heart activity signals using a modified lead II and by attaching each textile electrode to the chest band in four healthy male subjects in a standing static posture. We measured the signals four times repeatedly for all types of electrodes. The heart activity signals were sampled at 1 kHz using a BIOPAC ECG100, and the detected original signals were filtered through a band-pass filter. To compare the performance of heart activity signal acquisition among the different structures of the textile electrodes, we conducted a qualitative analysis using signal waveform and size as parameters. In addition, we performed a quantitative analysis by calculating signal power ratio (SPR) of the heart activity signals obtained through each electrode. We analyzed differences in the performance of heart activity signal acquisition of the six electrodes by performing difference and post-hoc tests using nonparametric statistic methods on the calculated SPR. The results showed a significant difference both in terms of qualitative and quantitative aspects of heart activity signals among the tested contact type textile electrodes. Regarding the configurations of the contact type textile electrodes, the three-dimensionally inflated electrode (3DIE) was found to obtain better quality signals than the flat electrode. However, regarding the electrode size, no significant difference was found in performance of heart signal acquisition for the three electrode sizes. These results suggest that the configuration method (flat/3DIE), which is one of the two requirements of a contact type textile electrode structure for heart activity signal acquisition, has a critical effect on the performance of heart activity signal acquisition for wearable healthcare. Based on the results of this study, we plan to develop a smart clothing technology that can monitor high-quality heart activity without time and space constraints by implementing a clothing platform integrated with the textile electrode and developing a performance improvement plan.

N- and P-doping of Transition Metal Dichalcogenide (TMD) using Artificially Designed DNA with Lanthanide and Metal Ions

  • Kang, Dong-Ho;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.292-292
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    • 2016
  • Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

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