• Title/Summary/Keyword: weak inversion

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A Chip Design of Body Composition Analyzer (체성분 분석용 칩 설계)

  • Bae, Sung-Hoon;Moon, Byoung-Sam;Lim, Shin-Il
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.3 s.357
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    • pp.26-34
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    • 2007
  • This Paper describes a chip design technique for body composition analyzer based on the BIA (Bioelectrical Impedance Analysis) method. All the functions of signal forcing circuits to the body, signal detecting circuits from the body, Micom, SRAM and EEPROMS are integrated in one chip. Especially, multi-frequency detecting method can be applied with selective band pass filter (BPF), which is designed in weak inversion region for low power consumption. In addition new full wave rectifier (FWR) is also proposed with differential difference amplifier (DDA) for high performance (small die area low power consumption, rail-to-rail output swing). The prototype chip is implemented with 0.35um CMOS technology and shows the power dissipation of 6 mW at the supply voltage of 3.3V. The die area of prototype chip is $5mm\times5mm$.

Research Trend of Topological Insulator Materials and Devices (위상절연체 소재 및 소자 기술 개발 동향)

  • W.J. Lee;T.H. Hwang;D.H. Cho;Y.D. Chung
    • Electronics and Telecommunications Trends
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    • v.38 no.1
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    • pp.17-25
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    • 2023
  • Topological insulators (TIs) emerge as one of the most fascinating and amazing material in physics and electronics. TIs intrinsically possess both gapless conducting surface and insulating internal properties, instead of being only one property such as conducting, semiconducting, and insulating. The conducting surface state of TIs is the consequence of band inversion induced by strong spin-orbit coupling. Combined with broken inversion symmetry, the surface electronic band structure consists of spin helical Dirac cone, which allows spin of carriers governed by the direction of its momentum, and prohibits backscattering of the carriers. It is called by topological surface states (TSS). In this paper, we investigated the TIs materials and their unique properties and denoted the fabrication method of TIs such as deposition and exfoliation techniques. Since it is hard to observe the TSS, we introduced several specialized analysis tools such as angle-resolved photoemission spectroscopy, spin-momentum locking, and weak antilocalization. Finally, we reviewed the various fields to utilize the unique properties of TIs and summarized research trends of their applications.

Application of Gold Exploration Using Three-dimensional Resistivity Inversion in Sambo mine (3차원 전기비저항 역산 방법을 이용한 삼보 광산에서 금광 탐사)

  • Park Jong-Oh;Kim Hee-Joon;Song Moo-Young;You Young-June
    • The Journal of Engineering Geology
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    • v.15 no.1
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    • pp.19-27
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    • 2005
  • The Sambo mine is located in Hae-je Myeon, Moo-an Gun, Chollanamdo, which consists of host gneiss and rhyolite possessing quartzite veins with other compositions such as gold, silver, and sublimated sulfur. The ore grade estimated from the core was 0.05~10.9g/t or less in gold and 0.05~389g/t or less in silver, indicating a partial mineralization. The purpose of this paper is to understand the subsurface structures and the distribution of mineralized bodies in the Sambo mine using a combined method of Schlumberger, Wenner, and Dipole-di-pole resistivity surveys on the surface and the resistivity tomography survey in boreholes. The result of three-dimensional resistivity inversion showed that the mineralized body is extended to 240m long in the N10°~20°E direction, with 30m wide and 80 m thick from the surface. The low resistivity zones (<1,000ohm-m) determined from the resistivity image were in good agreement with the mineralized bodies and weak zones identified from the logged cores.

Three-dimensional resistivity imaging for site investigations in civil engineering (지반조사를 위한 3차원 전기비저항 탐사)

  • Chung Seung-Hwan;Yi Myeong-Jong;Kim Jung-Ho;Cho Seong-Jun;Song Yoonho
    • 한국지구물리탐사학회:학술대회논문집
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    • 1999.08a
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    • pp.21-36
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    • 1999
  • Recently resistivity survey is widely used for site investigations in the field of civil engineering. Since such application area requires accurate interpretation tools especially in the area of complicated geology and rough terrain topography, we developed a three-dimensional (3-D) resistivity inversion code, which can reconstruct real earth structures. Furthermore, the inversion code gives resolution-enhanced images by applying the ACB(Active Constraint Balancing) method. With the help of this inversion code, 3-D resistivity survey is now used as new techniques for site investigations in civil engineering problem. By imaging the 3-D resistivity distribution, we could get useful informations such as depth distribution of basement rock, distribution of weak zone, fractures and cavities which is crucial to civil engineers.

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Acoustic 2-D Full-waveform Inversion with Initial Guess Estimated by Traveltime Tomography (주시 토모그래피와 음향 2차원 전파형 역산의 적용성에 관한 연구)

  • Han Hyun Chul;Cho Chang Soo;Suh Jung Hee;Lee Doo Sung
    • Geophysics and Geophysical Exploration
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    • v.1 no.1
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    • pp.49-56
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    • 1998
  • Seismic tomography has been widely used as high resolution subsurface imaging techniques in engineering applications. Although most of the techniques have been using travel time inversion, waveform method is being driven forward owing to the progress of computational environments. Although full-waveform inversion method has been known as the best method in terms of model resolving power without high-frequency restriction and weak scattering approximation, it has practical disadvantage that it is apt to get stuck in local minimum if the initial guess is far from the actual model and it consumes so much time to calculate. In this study, 2-D full-waveform inversion algorithm in acoustic medium is developed, which uses result of traveltime tomography as initial model. From the application on synthetic data, it is proved that this approach can efficiently reduce the problem of conventional approaches: our algorithm shows much faster convergence rate and improvement of model resolution. Result of application on physical modeling data also shows much improvement. It is expected that this algorithm can be applicable to real data.

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Application of Diffraction Tomography to GPR Data (지표레이다 자료에 대한 회절지오토모그래피의 적용성 연구)

  • Kim Geun-Young;Shin Changsoo;Suh Jung Hee
    • Geophysics and Geophysical Exploration
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    • v.1 no.1
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    • pp.64-70
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    • 1998
  • Diffraction tomography (DT) is a quantitative technique for high resolution subsurface imaging. In general DT algorithm is used for crosswell imaging. In this study high resolution GPR DT algorithm which is able to reconstruct high resolution image of subsurface structures in multi-monostatic geometry is developed. Developed algorithm is applied to finite difference data and its criteria of application and its limit are studied. Inversion parameters (number of imaging frequency, regularization factor, frequency range) are deduced from isolated weak scattering model. And the usuability of the algorithm is proved by applying to models which break the weak scattering approximation.

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A Constant $g_m$ Input Stage for Low Voltage Rail-to-Rail Operational Amplifier (일정 트랜스컨덕컨스 $g_m$를 갖는 저전압 Rail-to-Rail 연산증폭기의 입력단 회로의 설계)

  • 장일권;김세준송병근곽계달
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.791-794
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    • 1998
  • This paper presents a constant gm input stagefor low-voltage rail-to-rail operational amplifier. A proposed scheme uses two current paths to keep sum of the biasing currents of the complimentary input pairs. The op amp was designed in a $0.8\mu\textrm{m},$ n-well CMOS, double-polysilicon and double-metal technology. This achieved in weak inversion. The circuit can operate in power supply voltage from 1.5V up to 3V. An open-loop gain, AV, was simulated as 84dB for 15pF load. An unit-gain frequency, fT was 10MHz.

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A Study on the Design of the Voltage Down Converter for Low Power, High Speed DRAM (DRAM의 저전력, 고속화에 따른 VDC 설계에 관한 연구)

  • 주종두;곽승욱
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.707-710
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    • 1998
  • This paper presents a new voltage down converter(VDC) for low power, high speed DRAM. This VDC Consists of RVG(Reference Voltage Generator) and Driver Circuit. And it is independent of temperature variation, and Supply Voltage. Using weak inversion region, this RVG dissipates low power. Internal Voltage Source of this VDC is stable in spite of high speed operation of memory array. This circuit is designed with a $0.65\mu\textrm{m}$ nwell CMOS technology. In HSPICE simulation results, Temperature dependency of this RVG is $20\muV/^{\circ}C,$ supply voltage dependency is $\pm0.17%,$ $VCC=3.3V\pm0.3V,$ and current dissipation is $5.22\muA.$ Internal voltage source bouncing of this VDC is smaller than conventional VDC.

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The Mathematical Model on Crosstalk Effect of Airborne Noise Sources and Verification based on Comparison between Transfer Path Analysis Methods (소음원간 누화 효과에 대한 수학적 모델 및 전달 경로 분석법 비교를 통한 검증)

  • Byun, Jae-Hwan;Kim, Yoon-Jae;Kang, Yeon-June;Kang, Koo-Tae;Kwon, O-Jun;Hong, Jin-Chul
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.18 no.9
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    • pp.943-951
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    • 2008
  • In this paper, the mathematical model on crosstalk effect between acoustic noise sources is presented. Based on this model, a theoretical value to quantitate crosstalk effect of sources can be defined on the authority of reverberation property of surrounding which sources are located, relative magnitudes of sources and phase deference between acoustic wave transferred from all of sources. In order to verify crosstalk effect factor, experiments are made for two cases, weak and strong crosstalk effect condition, by using toro representative transfer path analysis(TPA) methods.

A Design of CMOS Subbandgap Reference using Pseudo-Resistors (가상저항을 이용한 CMOS Subbandgap 기준전압회로 설계)

  • Lee, Sang-Ju;Lim, Shin-Il
    • Proceedings of the KIEE Conference
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    • 2006.10c
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    • pp.609-611
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    • 2006
  • This paper describes a CMOS sub-bandgap reference using Pseudo-Resistors which can be widely used in flash memory, DRAM, ADC and Power management circuits. Bandgap reference circuit operates weak inversion for reducing power consumption and uses Pseudo-Resistors for reducing the chip area, instead of big resistor. It is implemented in 0.35um Standard 1P4M CMOS process. The temperature coefficient is 5ppm/$^{\circ}C$ from $40^{\circ}C$ to $100^{\circ}C$ and minimum power supply voltage is 1.2V The core area is 1177um${\times}$617um. Total current is below 2.8uA and output voltage is 0.598V at $27^{\circ}C$.

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