• Journal of the Korean Geosynthetics Society
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• v.22 no.1
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• pp.53-66
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• 2023

In this study, the results of the elasto-plastic beam analysis, finite element analysis and optimization design of the steel pipe sheet pile applied as an earth retaining wall under the deep excavation were presented. Through this study, it was found that the high-strength and sea resistant steel pipe has high allowable stress, excellent structural properties, favorable corrosion, and high utilization as an earth retaining wall, and the C-Y type joint has significantly improved the tensile strength and stiffness compared to the traditional P-P type. In addition, it was investigated that even if the leak or defect of the wall occurs during construction, it has the advantage of being able to be repaired reliably through welding and overlapping. In the case of steel pipe wall, they were evaluated as the best in views of the deep excavation due to the large allowable bending stress and deformation flexibility for the same horizontal displacement than CIP or slurry wall. Elasto-plastic and finite element analysis were conducted in consideration of ground excavation under large-scale earth pressure (uneven pressure), and the results were compared with each other. Quantitative maximum value were found to be similar between the two methods for each item, such as excavation behavior, wall displacement, or member force, and both analysis method were found to be applicable in design for steel pipe sheet pile wall. Finally, it was found that economical design was possible when determining the thinnest filling method with concrete rather than the thickest hollow shape in the same diameter, and the depth (the embedded length through normality evaluation) without rapidly change in displacement and member force.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.129-130
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cd}$, $V_s$, $Cd_{int}$, and $S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment m the S-atmosphere converted $CdIn_2S_4$ single crystal thin films to an optical p-type. Also. we confirmed that In in $CdIn_2S_4$/GaAs did not form the native defects because In in $CdIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• Archives of Craniofacial Surgery
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• v.10 no.1
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• pp.23-28
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• 2009

Purpose: Blow out fracture can present tenderness, swelling, enophthalmos, extraoccular muscle limitation, paresthesia, diplopia according to severity of injury, so reconstruction of blow out fracture is important. Orbital soft tissue should be in orbit and defected orbital wall should be corrected by autologus tissue or alloplastic implants. Every implants have their merits and faults, every implants are used various. This study was designed to compare the sequelae of blow-out fracture repair using the alloplastic implants: micro-titanium mesh(Micro Dynamic titanium $mesh^{(R)}$, Leibinger, Germany), porous polyethylene ($Medpor^{(R)}$, Porex, USA), absorbable mesh plate(Biosorb $FX^{(R)}$ . Bionx Implants Ltd, Finland). Methods: Between January 2006 and April 2008, 52 patients were included in a retrospective study analysing the outcome of corrected inferior orbital wall fracture with various kind of implants. Implants were inserted through subciliary incision. Twenty patients were operated with micro-titanium mesh, fourteen patients with porous polyethylene and eighteen patients with absorbable mesh plate. In comparative category, enophthalmos, diplopia, range of motion of extraoccular muscle, inferior orbital nerve injury were more on frequently statistically in patients. Results: Fourteen of 18 patients underwent surgical repair to improve diplopia, 11 of 17 patients to improve parasthesia, 11 of 15 patients to improve enophthalmos, 8 of 9 patients to improve extraoccular muscle limitation. Duration of follow-up time ranged from 6 months to 12 months(mean, 7.4 months). There was no statistic difference of sequelae between micro titanium mesh and porous polyethylene and absorbable mesh plate in blowout fracture, inferior wall. Conclusion: There is no difference of sequelae between micro-titanium mesh, porous polyethylene and absorbable mesh plate in blow-out fracture, inferior wall. The other factors such as defect size, location, surgeon's technique, may influence the outcome of blow-out fracture repair.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• Archives of Plastic Surgery
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• v.42 no.3
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• pp.288-294
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• 2015

Background Surgical ablation for locally advanced breast cancer results in large chest wall defects, which can then be managed with local flaps or skin grafts. The purpose of this article is to evaluate the outcomes of three types of local skin flaps. Methods Among 25 local flaps in 24 patients, 6 were bilateral advancement (BA) flaps, 9 were thoracoabdominal (TA) flaps, and 10 were thoracoepigastric (TE) flaps. Clinical outcomes were compared including complications, the need for a secondary surgical intervention, and the timing of adjuvant therapy. Results The mean defect size was $436.2cm^2$. Two patients with TA flaps and 6 patients with TE flaps developed distal flap necrosis, and skin grafts were needed to treat 2 patients with TE flaps. Radiation was administered to the BA, TA, and TE patients after average postoperative durations of 28, 30, or 41 days, respectively. The incidence of flap necrosis tended to be higher in TE patients, which lead to significant delays in adjuvant radiation therapy (P=0.02). Conclusions Three types of local skin flaps can be used to treat large chest wall defects after the excision of locally advanced breast cancer. Each flap has its own merits and demerits, and selecting flaps should be based on strict indications based on the dimensions and locations of the defects.

• Journal of Veterinary Clinics
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• v.26 no.5
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• pp.467-471
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• 2009

This report describes Neural Tube Defects (NTDs) with Abdominal Wall Defects (AWDs) on the sibling of Yorkshire terriers. The NTDs and AWDs are rare serious congenital defects. The NTDs are neurulation abnormality that results from to failed transformation of the neurual tube by the incomplete closure of the embryonic neural plate. These dysraphic states range form mild to severe according to developmental malformation that include fusion defects of skull (crania bifida; CB) and fusion defects of vertebrae (spina bifida; SB). The AWDs are genetic defects that results from to failed formation of abdominal wall and cavity. These dysraphic states are omphalocele and gastroschisis. The 12-month dam was delivered by caesarian section and 4 littermate had obvious malformations. One male dead stillbirth fetus (L1) was revealed the extruded abdominal viscera, omphalocele. One female fetus (L2) was died within 1 hour after birth with defects of abdominal muscle upper umbilicus, gastroschisis. 3rd fetus (L3) was died within 36 hours after parturition and revealed a copious dermal and vertebral defects on the midline thorax, upper SB asperta. 4th fetus (L4) is still growing well now at 6 months but at the 2 week age, appears hairy nevus on the frontal cranium and dorsal thoracic portion. The radiograph of L1 and L2 are shown decrease bony density of calvarium and L3 was shown defect of spinose processes of the T9-T13. On our knowledge, this is first report of the SB and CB in Yorkshire terrier. And also sibling of NTDs with AWDs that has not previously been reported in the dog.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.318-325
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T^2/(T＋489\;K)$. After the as-grown $ZnIn_2S_4$ single crystal thin films were annealed in Zn-, S-, and In-atmospheres, the origin of point defects of $ZnIn_2S_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $ZnIn_2S_4$ single crystal thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2S_4$/GaAs did not form the native defects because In in $ZnIn_2S_4$ single crystal thin films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.437-446
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• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.