• Ceramist
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• v.21 no.2
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• pp.75-82
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• 2018

In the photovoltaics (PV) industry, there were many efforts to reduce the cost of production with high efficiency. The single most important cost factor in silicon technology is the wafer, accounting presently for ~35% of the module cost. it was already shown that the solar cell efficiency can be maintained up to the thickness range of $40-60{\mu}m$. The direct production of ultra-thin silicon wafer is very attractive and numerous different techniques, such as electrochemical process, ion implantation, and epitaxial growth, have been proposed and developed in many academic and industrial laboratories.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.5
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• pp.171-174
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• 2016

The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ($(CH_3)_4NOH$, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.

• Journal of Radiation Protection and Research
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• v.49 no.2
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• pp.85-90
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• 2024

Background: This study focuses on the fabrication and characterization of quasi-hemispherical Cd_0.9Zn_0.1Te (CZT) detector for gamma-ray spectroscopy applications, aiming to contribute to advancements in radiation measurement and research. Materials and Methods: A CZT ingot was grown using the vertical Bridgman technique, followed by proper fabrication processes including wafering, polishing, chemical etching, electrode deposition, and passivation. Response properties were evaluated under various external bias voltages using gamma-ray sources such as Co-57, Ba-133, and Cs-137. Results and Discussion: The fabricated quasi-hemispherical CZT detector demonstrated sufficient response properties across a wide range of gamma-ray energies, with sufficient energy resolution and peak distinguishability. Higher external bias voltages led to improved performance in terms of energy resolution and peak shape. However, further improvements in defect properties are necessary to enhance detector performance under low bias conditions. Conclusion: This study underscores the efficacy of quasi-hemispherical CZT detector for gamma-ray spectroscopy, providing valuable insights for enhancing their capabilities in radiation research field.