• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.143-146
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• 2009

One of the most important issues of crystalline silicon solar cell is minimizing reflectance at the surface. Laser texturing is an isotropic process that will sculpt the surface of a silicon wafer, regardless of its crystallographic orientation. We investigated surface texturing process using Nd-YAG laser ($\lambda$=1064 nm) on multi-crystalline silicon wafer. Removal of slag formed after the laser process was performed using acid solution (HF : $HNO_3$ : $CH_3COOH$ : DI water). The reflectance and carrier lifetime of the samples were measured and analyzed using UV-Vis spectrophotometer and carrier lifetime tester. It was found that the minimum reflectance of the samples was 16.39% and maximum carrier life time was $21.8\;{\mu}s$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.111-114
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• 2001

(Ba,Sr) $RuO_3$ thin films were fabricated on Si(100) wafer by metal organic chemical vapor deposition using ultrasonic spraying. When the substrate temperature was varied, the BSR thin films showed good crystallinity above 50$0^{\circ}C$ and showed (110) preferred orientation by X-ray diffraction measurements. The surface morphology, determined by atomic force microscopy, indicated that the grain size of BSR thin films depended strongly on the Ba/Sr ratio. With the increase in the amount of Sr relative to Ba, the resistivity of BSR films decreased fro m415 to 261 $\mu$$\Omega$${\cdot}$cm.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.353-359
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• 1988

In this paper, the design and implementation of a multi-processor based die bonder machine for the semiconductor will be described. This is a final research results carried out for two years from June, 1986 to July, 1988. The mechanical system consists of three subsystems such as bonding head module, wafer feeding module, and lead frame feeding module. The overall control system consists of the following three subsystems each of which employs a 16 bit microprocessor MC 68000 : (i) supervisory control system, (ii) visual recognition / inspection system and (iii) the display system. Specifically, the supervisory control system supervises the whole sequence of die bonder machine, performs a self-diagnostics while it controls the bonding head module according to the prespecified bonding cycle. The vision system recognizes the die to inspect the die quality and deviation / orientation of a die with respect to a reference position, while it controls the wafer feeding module. Finally, the display system performs a character display, image display ans various error messages to communicate with operator. Lead frame feeding module is controlled by this subsystem. It is reported that the proposed control system were applied to an engineering sample and tested in real-time, and the results are sucessful as an engineering sample phase.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.177-184
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• 2001

C3M(chemical mechanical micro machining) is applied for diminishing the size of burr and fabricating the massless patterning for aluminium wafer(thickness of 1${\mu}m$). It is difficult to perform the micro size machining with the radically increased shear stress. While the miniaturization and function-orientation of parts has been needed in the many field such as electronics, optics and medicine. etc., it is not enough to satisfy the industry needs in the machining technology. In this paper feasibility test of diminishing burr and fabricating maskless pattern was experimented and analyzed. In the experiment oxide layer was farmed on the aluminium with chemical reaction by ${HNO_3}$(10wt%), then the surface was grooved with tungsten carbide tool for the different condition such as the load and fred rate. The result was compared with the conventional machining to show the improvement of C3M with SEM for burr diminish and XPS for atomic existence, AFM for more precise image.

• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.726-731
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• 2011

The present work shows how the flexural displacement-induced fracture strength of silicon devices, whose back surfaces have wafer grinding-induced scratch marks, depends on the crystallographic orientation. Experimental results indicate that silicon devices with scratch marks parallel to their lateral direction (i.e. reference axis in this work) are very susceptible to flexural fracture, as compared to devices with marks which deviated from the direction. The 3-point bending test shows that the fracture strength of silicon devices having marks which are oriented away from the reference axis is 2.6 times higher than that of devices with marks parallel to the axis. It was particularly interesting to see that silicon devices with identical preferred marks even reveal different fracture strengths, depending on whether the marks are involved in specific crystal planes such as {111} or {011}, called cleavage planes. This work demonstrates that silicon devices with the reference axis-aligned scratch marks not existing on such cleavage planes can have higher fracture strength approximately 20% higher than those existing on the planes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.257-258
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C$, $200^{\circ}C$, $100^{\circ}C$, and R.T., by the temperature controller during the deposition. The crystall me and micro-structural characteristics of the films were investigated by XRD and SEM ZnO films which cooled down naturally or slowly by temperature controller during deposition, especially the film were deposited with cooling down from $400^{\circ}C$ to $200^{\circ}C$ slowly, showed the most outstanding c-axis preferred orientation.

• Journal of Magnetics
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• v.14 no.1
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• pp.42-46
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• 2009

The measurement of external magnetic field orientation using Giant Magneto Impedance (GMI) sensors has been performed. A soft magnetic alloy of $Co_{30}Fe_{34}Ni_{36}$ was electroplated on a Si wafer with a CoFeNi seed layer. V-shaped microwire patterns were formed using a conventional photolithography process. An external magnetic field was generated by a rectangular AlNiCo permanent magnet. The reference direction was defined as the external magnetic field direction oriented in the middle of 2 GMI devices. As the orientation of the magnetic field deviated from the reference direction, variation in the field component along each device introduced voltage changes. It was found that, by taking the voltage difference between the left and right arms of the Vshaped device, the nonlinearity of each device could be significantly reduced. The fabricated angle sensor had a linear range of approximately $70^{\circ}$ and an overall sensitivity of approximately 10 mV.

• Journal of Magnetics
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• v.9 no.4
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• pp.116-120
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• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1428-1430
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• 1995

In this study we fabricate Knife type Si-tip array using (110) Si wafer. We can fabricate vertical structure by anisotropic etching using EPW and observe it by SEM. After the step, we perform isotropic etching and oxidation sharpening of the structure and also observe it by SEM, respectively. The purpose of isotropic etching is to reduce the oxidation time. We attain a optimal tip whose radius is about $100{\AA}$ after anisotropic etching 2.25 min.+isotropic etching 5 min.+oxidation 1 hour and 23 min.