• 제목/요약/키워드: wafer level test bin

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포아송 분포를 가정한 Wafer 수준 Statistical Bin Limits 결정방법과 표본크기 효과에 대한 평가 (Methods and Sample Size Effect Evaluation for Wafer Level Statistical Bin Limits Determination with Poisson Distributions)

  • 박성민;김영식
    • 산업공학
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    • 제17권1호
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    • pp.1-12
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    • 2004
  • In a modern semiconductor device manufacturing industry, statistical bin limits on wafer level test bin data are used for minimizing value added to defective product as well as protecting end customers from potential quality and reliability excursion. Most wafer level test bin data show skewed distributions. By Monte Carlo simulation, this paper evaluates methods and sample size effect regarding determination of statistical bin limits. In the simulation, it is assumed that wafer level test bin data follow the Poisson distribution. Hence, typical shapes of the data distribution can be specified in terms of the distribution's parameter. This study examines three different methods; 1) percentile based methodology; 2) data transformation; and 3) Poisson model fitting. The mean square error is adopted as a performance measure for each simulation scenario. Then, a case study is presented. Results show that the percentile and transformation based methods give more stable statistical bin limits associated with the real dataset. However, with highly skewed distributions, the transformation based method should be used with caution in determining statistical bin limits. When the data are well fitted to a certain probability distribution, the model fitting approach can be used in the determination. As for the sample size effect, the mean square error seems to reduce exponentially according to the sample size.

The Effects of UBM and SnAgCu Solder on Drop Impact Reliability of Wafer Level Package

  • Kim, Hyun-Ho;Kim, Do-Hyung;Kim, Jong-Bin;Kim, Hee-Jin;Ahn, Jae-Ung;Kang, In-Soo;Lee, Jun-Kyu;Ahn, Hyo-Sok;Kim, Sung-Dong
    • 마이크로전자및패키징학회지
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    • 제17권3호
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    • pp.65-69
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    • 2010
  • In this study, we investigated the effects of UBM(Under Bump Metallization) and solder composition on the drop impact reliability of wafer level packaging. Fan-in type WLP chips were prepared with different solder ball composition (Sn3.0Ag0.5Cu, and Sn1.0Ag0.5Cu) and UBM (Cu 10 ${\mu}m$, Cu 5 ${\mu}m$\Ni 3 ${\mu}m$). Drop test was performed up to 200 cycles with 1500G acceleration according to JESD22-B111. Cu\Ni UBM showed better drop performance than Cu UBM, which could be attributed to suppression of IMC formation by Ni diffusion barrier. SAC105 was slightly better than SAC305 in terms of MTTF. Drop failure occurred at board side for Cu UBM and chip side for Cu\Ni UBM, independent of solder composition. Corner and center chip position on the board were found to have the shortest drop lifetime due to stress waves generated from impact.