• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1376-1379
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• 2004

This study is designed integration and control system of GaAs bonding system consisted of multi-processing using DeviceNet and GEM-Protocol. Developing bonding system is composed of resin coating, pre-baking pre-aligner, bonding, material handler(flip robot), and wafer cassette, etc. This system has process-fluent of each a process and share information using GEM-protocol. This study devised virtual bonding simulator to control and to monitor bonding system efficiently. Also we can verify optimizing of system previously through a virtual bonding simulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.301-307
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• 2002

Direct bonded SOI wafer pairs with $Si ll SiO_2/Si_3N_4 ll Si$ the heterogeneous insulating layers of SiO$_2$-Si$_3$N$_4$are able to apply to the micropumps and MEMS applications. Direct bonding should be executed at low temperature to avoid the warpage of the wafer pairs and inter-diffusion of materials at the interface. 10 cm diameter 2000 ${\AA}-SiO_2/Si(100}$ and 560 $\AA$- ${\AA}-Si_3N_4/Si(100}$ wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were pre- mated with facing the mirror planes by a specially designed aligner in class-100 clean room immediately. We employed a heat treatment equipment so called fast linear annealing(FLA) with a halogen lamp to enhance the bonding of pre mated wafers We kept the scan velocity of 0.08 mm/sec, which implied bonding process time of 125 sec/wafer pairs, by varying the heat input at the range of 320~550 W. We measured the bonding area by using the infrared camera and the bonding strength by the razor blade clack opening method, respective1y. It was confirmed that the bonding area was between 80% and to 95% as FLA heat input increased. The bonding strength became the equal of $1000^{\circ}C$ heat treated $Si ll SiO_2/Si_3N_4 ll Si$ pair by an electric furnace. Bonding strength increased to 2500 mJ/$\textrm{m}^2$as heat input increased, which is identical value of annealing at $1000^{\circ}C$-2 hr with an electric furnace. Our results implies that we obtained the enough bonding strength using the FLA, in less process time of 125 seconds and at lowed annealing temperature of $400^{\circ}C$, comparing with the conventional electric furnace annealing.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.2
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• pp.195-202
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• 2004

This paper presents the fabrication and evaluation of mechanical behavior for a peristaltic micropump by flow simulation. The valve-less micropump using the diffuser/nozzle is consists of the lower plate, the middle plate, the upper plate and the tube that connects inlet and outlet of the pump. The lower plate includes the channel and the chamber, and the plain middle plate are made of glass and actuated by the piezoelectric translator. Channels and a chamber on the lower plate are fabricated on high processability silicon wafer by the DRIE(Deep Reactive Ion Etching) process. The upper plate does the roll of a pump cover and has inlet/outlet/electric holes. Three plates are laminated by the aligner and bonded by the anodic bonding process. Flow simulation is performed using error-reduced finite volume method (FVM). As results of the flow simulation and experiments, the single chamber pump has severe flow problems, such as a backflow and large fluctuation of a flow rate. It is proved that the double-chamber micropump proposed in this paper can reduce the drawback of the single-chamber one.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1186-1190
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• 2003

In this paper, a valveless bubble-actuated fluid micropump was has been developed and its performance was tested. The valveless micropump consists of the lower plate, the middle plate, the upper plate and a resistive heater. The lower plate includes the nozzle-diffuser elements and the double-chamber. Nozzle-diffuser elements and a double-chamber are fabricated on the silicon wafer by the DRIE(Deep Reactive Ion Etching) process. The lower plate also has inlet/outlet channels for fluid flow. The middle plate is made of glass and plays the role of the diaphragm. The chamber in the upper plate is filled with deionized water, and which contacts with the resistive heater. The resistive heater is patterned on a silicon substrate by Ti/Pt sputtering. Three plates and the resister heater are laminated by the aligner and bonded in the anodic bonder. Since the bubble is evaporated and condensed periodically in the chamber, the fluid flows from inlet to outlet with respect to the diffusion effect. In order to avoid backflow, the double chamber system is introduced. Analytical and experimental results show the validity of the developed double-chamber micropump.