• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.199-204
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• 2016

This paper was proposed floating island power MOSFET for lowering on state resistance and the proposed device was maintained 600 V breakdown voltage. The electrical field distribution of floating island power MOSFET was dispersed to floating island between P-base and N-drift. Therefore, we designed higher doping concentration of drift region than doping concentration of planar type power MOSFET. And so we obtain the lower on resistance than on resistance of planar type power MOSFET. We needed the higher doping concentration of floating island than doping concentration of drift region and needed width and depth of floating island for formation of floating island region. We obtained the optimal parameters. The depth of floating island was $32{\mu}m$. The doping concentration of floating island was $5{\times}1,012cm^2$. And the width of floating island was $3{\mu}m$. As a result of designing the floating island power MOSFET, we obtained 723 V breakdown voltage and $0.108{\Omega}cm^2$ on resistance. When we compared to planar power MOSFET, the on resistance was lowered 24.5% than its of planar power MOSFET. The proposed device will be used to electrical vehicle and renewable industry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.523-526
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• 2016

This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

• ETRI Journal
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• v.37 no.1
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• pp.118-127
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• 2015

The power consumption of 3D many-core processors can be reduced, and the power delivery of such processors can be improved by introducing voltage island (VI) design using on-chip voltage regulators. With the dramatic growth in the number of cores that are integrated in a processor, however, it is infeasible to adopt per-core VI design. We propose a 3D many-core processor architecture that consists of multiple voltage clusters, where each has a set of cores that share an on-chip voltage regulator. Based on the architecture, the steady state temperature is analyzed so that the thermal characteristic of each voltage cluster is known. In the voltage scaling and task scheduling stages, the thermal characteristics and communication between cores is considered. The consideration of the thermal characteristics enables the proposed VI formation to reduce the total energy consumption, peak temperature, and temperature gradients in 3D many-core processors.

• Journal of Electrical Engineering and Technology
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• v.7 no.4
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• pp.601-605
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• 2012

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.6
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• pp.494-502
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• 2014

This paper presents a control method of the modular multilevel converter - high-voltage direct current (MMC-HVDC) system to regulate grid voltage on the basis of the Jeju Island power system. In this case, the MMC-HVDC system is controlled as a static synchronous compensator (Statcom) to exchange the reactive power with the power grid. The operation of the MMC-HVDC system is verified by using the PSCAD/EMTDC simulation program. The Jeju Island power system is first established on the basis of the parameters and measured data from the real Jeju Island power system. This power system consists of two line-commutated converter - high-voltage direct current (LCC-HVDC) systems, two Statcom systems, wind farms, thermal power plants, transformers, and transmission and distribution lines. The proposed control method is then applied by replacing one LCC-HVDC system with a MMC-HVDC system. Simulation results with and without using the MMC-HVDC system are compared to evaluate the effectiveness of the control method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.222-228
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• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

• Journal of Power Electronics
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• v.18 no.1
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• pp.204-211
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• 2018

At present, one of two LCC-HVDC systems is responsible for controlling the grid frequency of the Jeju Island Power System (JIPS). The grid voltage is regulated by using STATCOMs. However, these two objectives can be achieved in one device that is called by a modular multilevel converter-high voltage direct current (MMC-HVDC) system. Therefore, this paper proposes frequency and voltage control strategies for the JIPS based on a MMC-HVDC system. In this case, the ancillary frequency and voltage controllers are implemented into the MMC-HVDC system. The modelling of the JIPS is done based on the parameters and measured data from the real JIPS. The simulation results obtained from the PSCAD/EMTDC simulation program are confirmed by comparing them to measured data from the real JIPS. Then, the effect of the MMC-HVDC system on the JIPS will be tested in many cases of operation when the JIPS operates with and without STATCOMs. The objective is to demonstrate the effectiveness of the proposed control strategy.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.832-841
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• 2016

The voltage-frequency island (VFI) design paradigm has strong potential for achieving high energy efficiency in communication centric manycore system-on-chip (SoC) design called network-on-chip (NoC). However, because of the diminished scaling of wire-dimension and supply voltage as well as threshold voltage in modern CMOS technology, the vulnerability to link failure in VFI NoC is becoming a crucial challenge. In this paper, we propose an energy-optimized topology generation technique for VFI NoC to cope with permanent link failures. Based on the energy consumption model, we exploit the on-chip communication traffic patterns and characteristics of link failures in the early design stage to accommodate diverse applications and architectures. Experimental results using a number of multimedia application benchmarks show the effectiveness of the proposed three-step custom topology generation method in terms of energy consumption and latency without any degradation in the fault coverage metric.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.47-55
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• 2015

This paper proposes the installation of a new modular multilevel converter based high-voltage direct current (MMC-HVDC) system to connect between mainland and Jeju island power systems in Korea in 2020. The purpose is to combine with two old line-commutated converters (LCC)-based HVDC system to achieve a stability of the Jeju island power system. The operation of the overall system will be analyzed in three cases: (i) wind speed is variable, (ii) either one of the LCC-HVDC systems is shutdown because of a fault or overhaul, (iii) a short circuit fault occurs at the mainland side. The effectiveness of the proposed control method is confirmed by the simulation results based on a PSCAD/EMTDC simulation program.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.247-252
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• 2012

IGBT (insulated gate bipolar transistor) has been widely used around the power industry as it has good switching performance and its excellent conductance. In order to reduce power loss during switch turn-on state, it is essential to reduce its resistance. However, trade off relationship between breakdown voltage and device conductance is the greatest obstacle on the way of improvement. Floating island structure is one of the solutions. Still, under optimized device condition for the best performance, improvement rate is negligible. Therefore, this paper suggests adding trench gate on floating island structure to eliminate JFET (junction field effect transistor) area to reduce resistance and activate floating island effect. Experimental result by 2D simulation using TCAD, shows 20% improvement of turn-on state voltage drop.