• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.811-814
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• 2012

This paper have analyzed the change of breakdown voltage for channel dimension of double gate(DG) MOSFET. The breakdown voltage to have the small value among the short channel effects of DGMOSFET to be next-generation devices have to be precisely analyzed. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The breakdown voltages have been analyzed for device parameters such as channel thickness and doping concentration, and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is influenced on Gaussian function and device parameters for DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.818-821
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.825-828
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• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2511-2516
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.657-662
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• 2014

This paper has analyzed the subthreshold swings for top and bottom gate voltages of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates. The subthreshold swing, therefore, has to be analyze not only for top gate voltage, but also for bottom gate voltage. In the pursuit of this purpose, Poisson equation has been solved to obtain the analytical solution of potential distribution with Gaussian function, and the subthreshold swing model has been presented. As a result to observe the subthreshold swings for the change of top and bottom gate voltage using this subthreshold swing model, we know the subthreshold swings are greatly changed for gate voltages. Especially we know the conduction path has been changed for top and bottom gate voltage and this is expected to greatly influence on subthreshold swings.

• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.2
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• pp.120-126
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• 2021

DC-link capacitors are one of the main components in two-level three-phase voltage source inverters (VSIs); they provide the pulsating input current and stabilize the vacillating DC-link voltage. Ideally, the larger the capacitance of DC-link capacitors, the better the DC-link voltage stabilizes. However, high capacitance increases the cost and decreases the power density of VSI systems. Therefore, the capacitance should be chosen carefully on the basis of the DC-link voltage ripple requirement. However, the DC-link voltage ripple is dependent on the pulse-width modulation (PWM) strategy. This study especially presents a DC-link voltage ripple analysis when the minimum loss discontinuous PWM strategy is applied. Furthermore, an equation for the selection of the minimum capacitance of DC-link capacitors is proposed. Experimental results with R-L loads are also provided to verify the effectiveness of the presented analysis.

• Journal of Welding and Joining
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• v.27 no.3
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• pp.67-72
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• 2009

The flux cored arc welding (FCAW) process is one of the most frequently employed and important welding process due to high productivity and excellent workability. The process is performed either as an automated process or as a semi-automatic process. In FCAW process, welding voltage has been considered as a qualitative indication of arc length. But it is necessary to let welding operators know, maintain and manage the arc length directly by estimating and displaying it. In this study, to develop arc length estimation technique, we measured a welding circuit resistance($R_sc$) and then we calculated welding circuit voltage drop($V_sc$). Also, we measured arc peak voltage($V_ap$). By subtracting $V_sc$ from $V_arc$, we can easily calculate net arc voltage drop($V_arc$). Consequently, we suggested arc length estimating equation and basic algorithm by regressive analyzing the relationship between net arc voltage drop($V_arc$) and real arc length(Larc) measured by high speed camera. Therefore, arc length can be predicted by just monitoring welding current and voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.67-73
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• 2003

The algorithm (or calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is Proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data and the base-collector breakdown voltage of NPN BJT using 30V process shows an averaged relative error of 4.3% compared with the measured data

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.341-344
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• 1988

This paper derives a condition foe constant voltage i constant frequency generation of doubly-fed induction generator. The condition is varied by the magnitude of output voltage, load current and its power factor, slip of the machine. Magnitude of output voltage is controlled by exiting voltage which is caculated by derived equation from operating condition. frequency of output voltage is controlled by injecting slip frequency to the rotor which is the difference between wanted output frequency and rotor frequency.