• Title/Summary/Keyword: voltage equation

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A Study on the Theory of $\frac {1}{f}$ Noise in Electronic Devies (전자소자에서의 $\frac {1}{f}$잡음에 관한 연구)

  • 송명호
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.3 no.1
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    • pp.18-25
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    • 1978
  • The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

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A CFD Modeling of Heat Generation and Charge-Discharge Behavior of a Li-ion Secondary Battery (Li-ion 이차전지의 충방전 시 발열 및 충방전 특성의 CFD 모델링)

  • Kang, Hyeji;Park, Hongbeom;Han, Kyoungho;Yoon, Do Young
    • Journal of the Korean Electrochemical Society
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    • v.19 no.3
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    • pp.114-121
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    • 2016
  • This study investigates a CFD modeling of the charge-discharge behavior due to heat generation during charge-discharge cycles of a Li-ion secondary battery(LIB). Present LIB system adopted a current-density equation, heat and mass transfer governing equations upon the 1-dimensional system to the thickness direction for the rectangular pouch configuration. According to the 3-kinds of the charge-discharge current densities of 1C($17.5A/m^2$), 3C($52.5A/m^2$) and 5C($87.5A/m^2$) subject to a 3 V of cut-off voltage, a constant-temperature system at 298 K and three different heat generating systems were analyzed with comparison. Battery capacity decreases with increment of charge-discharge densities not only at the constant-temperature system but also at the heat-generating system. The time for charge-discharge cycles increases at the heat-generating system compare to the constant-temperature system. These trends are considered that the increase of temperature due to heat generation causes the decrement of equilibrium potential of electrodes and the increment of diffusivity of Li ions. Furthermore, cooling effects were discussed in order to control the influence of heat generation due to charge-discharge behavior of a Li-ion secondary battery.

Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

Study on the Tracking Characteristics Depending on Accelerated Degradation of PVC Insulation Material (PVC 절연재료의 가속열화에 따른 트래킹 특성에 관한 연구)

  • Choi, Su-Gil;Kim, Si-Kuk
    • Fire Science and Engineering
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    • v.31 no.6
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    • pp.91-98
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    • 2017
  • The present paper is a study on the tracking characteristics depending on accelerated degradation of PVC insulation material. In order to insulation degradation of PVC insulation material, the Arrhenius equation, a type of accelerated degradation test formula, was used to conduct accelerated degradation experiments with experiment samples prepared at the following age equivalents: 0, 10, 20, 30 and 40 years. Afterwards, a tracking experiment was conducted on the accelerated experiment samples as part of the KS C IEC 60112 criteria. When measuring the PVC tracking features according to the accelerated aging, the results showed that when 0.1% of ammonium chloride was added to the PVC insulating material, but no tracking occurred. However, depending on the age equivalent, The results of analyzing the current waveform and voltage waveform of the tracking propagation process showed the age equivalent from 0 years to 40 years displayed a break down in insulation resistance and even the BDB(before dielectric breakdown) sections did not maintain the same functionality of the original material. Based on a criterion of an age equivalent of 0 years, material with an age equivalent of 10 years posed a 1.4 times greater risk, material with an age equivalent of 20 years posed a 2 times greater risk, material with an age equivalent of 30 years posed a 4.6 times greater risk, and material with an age equivalent of 40 years posed a 7 times greater risk.

Degradation from Polishing Damage in Ferroelectric Characteristics of BLT Capacitor Fabricated by Chemical Mechanical Polishing Process (화학적기계적연마 공정으로 제조한 BLT Capacitor의 Polishing Damage에 의한 강유전 특성 열화)

  • Na, Han-Yong;Park, Ju-Sun;Jung, Pan-Gum;Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.236-236
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    • 2008
  • (Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

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Defects and Electrical Properties of NiO and Co3O4-doped ZnO-Bi2O3-Sb2O3 Ceramics (NiO와 Co3O4를 첨가한 ZnO-Bi2O3-b2O3 세라믹스의 결함과 전기적 특성)

  • Hong, Youn-Woo;Lee, Young-Jin;Kim, Sei-Ki;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.38-43
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    • 2013
  • In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

Development of Hardware for the Architecture of A Remote Vital Sign Monitor (무선 체온 모니터기 아키텍처 하드웨어 개발)

  • Jang, Dong-Wook;Jang, Sung-Whan;Jeong, Byoung-Jo;Cho, Hyun-Seob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.7
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    • pp.2549-2558
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    • 2010
  • A Remote Vital Sign Monitor is an in-home healthcare system designed to wirelessly monitor core-body temperature. The Remote Vital Sign Monitor provides accuracy and features which are comparable to hospital equipment while minimizing cost with ease-of-use. It has two parts, a bandage and a monitor. The bandage and the monitor both use the Chipcon2430(CC2430) which contains an integrated 2.4GHz Direct Sequence Spread Spectrum radio. The CC2430 allows Remote Vital Sign Monitor to operate at over a 100-foot indoor radius. A simple user interface allows the user to set an upper temperature and a lower temperature that is monitored with respect to the core-body temperature. If the core-body temperature exceeds the one of two defined temperatures, the alarm will sound. The alarm is powered by a low-voltage audio amplifier circuit which is connected to a speaker. In order to accurately calculate the core-body temperature, the Remote Vital Sign Monitor must utilize an accurate temperature sensing device. The thermistor selected from GE Sensing satisfies the need for a sensitive and accurate temperature reading. The LCD monitor has a screen size that measures 64.5mm long by 16.4mm wide and also contains back light, and this should allow the user to clearly view the monitor from at least 3 feet away in both light and dark situations.

Introduction to Electrochemical Quartz Crystal Microbalance Technique for Leaching Study of Metals (금속 침출연구를 위한 전기화학적 미소수정진동자저울 기술 소개)

  • Kim, Min-seuk;Chung, Kyeong Woo;Lee, Jae-chun
    • Resources Recycling
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    • v.29 no.1
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    • pp.25-34
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    • 2020
  • Electrochemical Quartz Crystal microbalance is a tool that is capable of measuring nanogram-scale mass change on electrode surface. When applying alternating voltage to the quartz crystal with metal electrode formed on both sides, a resonant frequency by inverse piezoelectric effect depends on its thickness. The resonant frequency changes sensitively by mass change on its electrode surface; frequency increase with metal dissolution and decrease with metal deposition on the electrode surface. The relationship between resonant frequency and mass change is shown by Sauerbrey equation so that the mass change during metal dissolution can be measured in real time. Especially, it is effective in the case of reaction mechanism and rate studies accompanied by precipitation, volatilization, compound formation, etc. resulting in difficulties on ex-situ AA or ICP analysis. However, it should be carefully considered during EQCM experiments that temperature, viscosity, and hydraulic pressure of solution, and stress and surface roughness can affect on the resonant frequency. Application of EQCM was shown as a case study on leaching of platinum using aqueous chlorine for obtaining activation energy. A platinum electrode of quartz crystal oscillator with 1000 Å thickness exposed to solution was used as leaching sample. Electrogenerated chlorine as oxidant was purged and its concentration was controlled in hydrochloric acid solution. From the experimental results, platinum dissolution by chlorine is chemical reaction control with activation energy of 83.5 kJ/mol.

Modeling Residual Water in the Gas Diffusion Layer of a Polymer Electrolyte Membrane Fuel Cell and Analyzing Performance Changes (고분자 전해질막 연료전지의 기체확산층 내부 잔류수 모델링 및 성능변화해석)

  • Jiwon Jang;Junbom Kim
    • Applied Chemistry for Engineering
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    • v.35 no.1
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    • pp.16-22
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    • 2024
  • Polymer electrolyte membrane fuel cells have the advantage of low operating temperatures and fast startup and response characteristics compared to others. Simulation studies are actively researched because their cost and time benefits. In this study, the resistance of water residual in the gas diffusion layer (GDL) of the unit cell was added to the existing equation to compare the actual data with the model data. The experiments were conducted with a 25 cm2 unit cell, and the samples were separated into stopping times of 0, 10, and 60 minutes following primary impedance measurement, activation, and polarization curve data acquisition. This gives 0, 10, and 60 minutes for the residual water in the GDL to evaporate. Without the rest period, the magnitude of the performance improvement was not significantly different at the same potential and flow rate, but the rest period did improve the performance of the membrane electrode assembly when measuring impedance. By changing the magnitude of the resistance reduction to an overvoltage, the voltage difference between the fuel cell model with and without residual water was compared, and the error rate in the high current density region, which is dominated by concentration losses, was reduced.

Exact Solutions of Plasma Diffusion in a Fine Tube Positive Column Discharge (세관 양광주 방전에서 플라즈마 확산의 완전 해)

  • Jin, D.J.;Jeong, J.M.;Kim, J.H.;Hwang, H.C.;Chung, J.Y.;Cho, Y.H.;Lim, H.K.;Koo, J.H.;Choi, E.H.;Cho, G.S.
    • Journal of the Korean Vacuum Society
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    • v.19 no.1
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    • pp.36-44
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    • 2010
  • The ambipolar diffusion equation has been solved in a fine-tube lamp of a few mm in diameter. In the diffusion of radial direction, the plasma diffuses and vanishes away at the glass wall by recombination with the characteristic time of plasma loss is given by $\tau_r\;=\;(r_0/2.4)^2/D_a$. With the radius $r_0{\sim}1\;mm$ and the ambipolar diffusion coefficient $D_a{\sim}0.01\;m^2/s$, the vanishing time is calculated $\tau_r{\sim}10\;{\mu}s$ which corresponds to the least value of frequency 30 kHz for the sustaining the plasma in the operation of high voltage AC-power. In the diffusion of longitudinal z-direction, a high density plasma generated at the area of a high voltage electrode, diffuses into the positive column with the characteristic time $\tau_z{\sim}0.1\;s$. The plasma diffusion velocity at the boundary of high density plasma is $u_D{\sim}10^2\;m/s$ at the time $t{\sim}10^{-6}$ s and the diffusion velocity becomes slow as $u_D{\sim}1\;m/s$ at $t{\sim}10^{-3}\;s$. Therefore, for the long lamp of 1 m, it takes about several seconds for the high density plasma at the area of electrode to diffuse through the whole positive column space.