• 제목/요약/키워드: voltage biased dependent external quantum efficiency

검색결과 1건 처리시간 0.01초

Investigation of Carrier Transport Mechanism in Schottky Type InAs/GaAs Quantum Dot Solar Cells

  • 김호성;류근환;양현덕;박민수;김상혁;송진동;최원준;박정호
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
    • /
    • pp.319.1-319.1
    • /
    • 2014
  • We present the results on the indium tin oxide (ITO) Schottky barrier solar cells (SBSCs) with InAs quantum dots (QDs). The dependence of external quantum efficiency on the external bias voltage has been studied to anlayze carrier extraction through tunneling at room temperature.

  • PDF