• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.108-111
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• 2001

ZnO thin films on (001) sapphire substrates knave been deposited by pulsed laser deposition(PLD) technique for light emitting device applications. We have controlled the emission intensity of UV and visible light, depending on film thickness and various post-annealing time. UV emission became strong as the thickness of ZnO thin films increased. The intensity of visible light was strong as post-annealing temperature increased. The optical properties of the ZnO thin films were characterized by PL(photoluminescence) and the structural properties of the ZnO were characterized by XRD for the application of ZnO light emission device.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.887-890
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• 2008

We present 2D slab silicon-based photonic crystal optical insulator to enhance light emission efficiency of light-emitting diode (LED). A 2D slab silicon photonic crystal is designed in such a way that light emitting diode die can be placed in the middle of the silicon photonic crystal. The device creates light propagation forbidden region in horizontal plane for Transverse Electric (TE) light with the wavelength range of 450 nm to 600 nm.

• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.50-55
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• 2015

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3-0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.598-601
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• 2000

We investigated the fabrication of Si nanoparticle and $C_{60}$ thin films by pulsed laser ablation. As a result, we observed visible green photoluminescence spectra in the Si/C$_{60}$ multilayer films after laser annealing. It is considered that this green photoluminescence is occurred from SiC particles, which is produced reaction of Si nanoparticles with $C_{60}$ via laser annealing.ing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.938-942
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• 2008

Electrical and optical properties of semitransparent Ag and Al layer were studied, which are used for the electrodes in top-emission organic light-emitting diodes. Sheet resistance and transmittance of visible light through a thin layer were measured and analyzed. Several thin metal layers of Ag and Al were deposited onto a glass substrate up to a thickness of 50 nm using a thermal evaporation. Sheet resistance measurements show that a layer thickness is needed more than 15 nm and 20 nm for Ag and Al, respectively, when a proper sheet resistance is assumed to be less than $50{\Omega}/sq$. From the measurements of transmittance of visible light through a thin-metal layer, metallic behavior was observed when the layer thickness is over 25 nm for both films. Thus, from a study of sheet resistance and transmittance of visible light, a minimum proper thickness of semitransparent metal layer is 20 nm and 25 nm for Ag and Al, respectively.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.464-467
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• 2002

We propose the use of visible scintillation light for monitoring the X-ray CT in the gantry of a diagnostic CT for its performance test and maintenance works. We placed a disk of bare plastic scintillator disk in the gantry opening area of a helical X-ray CT. When we operated the CT, we could observe the emission of blue scintillation light from the scintillator in a dark room. Visible light was identified under all scanning conditions of diagnostic uses. As a result, we observed the direction and the spread of the incident X-ray in the scintillator. We also observed the change of the part of the scintillator where visible light was generated, and the move that took place associating with the rotation of the X-ray tube during one CT scan. On the basis of the observation, we examined the usefulness of the visible scintillation light as a convenient performance-evaluating tool as well as a maintenance tool of the CT.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.9B
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• pp.1108-1116
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• 2011

The visible light communication system that transmits data by controlling light emission of LED and receives data through photo detecter is considered as one of the strong candidates of the next generation wireless communication systems. The visible light communication provides both lighting and wireless communication wherever the LED lamps are installed. Due to the feature of visible light communication system, the communication is possible within the area that LED light reaches, and the communication quality depends on the light intensity received at the receiver. In this paper, we analyze the effects of LED panel position and lighting angel on communication channel quality in visible light communication systems. Through computer simulations, we prove that position of LED panel and light angle have a great impact on illuminance and SNR of the visible light communication systems.

• Journal of Information Display
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• v.7 no.3
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• pp.23-26
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• 2006

We fabricated top emission organic light emitting diode (TEOLED) with transparent metal cathode Barium and Silver bilayer. Very thin Ba/Ag bilayer was deposited on the organic layer by thermal evaporation. This cathode showed high transmittance over 70% in visible range, and the device with a Ba-Ag has a low turn on voltage and good electrical properties.