• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.10
• /
• pp.33-37
• /
• 2007

This paper presents the implementation technique to reduce circuit area occupation in designing Low Noise Amplifier (LNA) using vertical shunt symmetric inductor. We applied a vertical shunt symmetric inductor to match the input and output in 3 GHz CMOS LNA to reduce the circuit area. This size efficient amplifier has been designed in a $0.18\;{\mu}m$ digital logic CMOS process. In this paper, the case of conventional asymmetric inductor, and vertical shunt symmetrical inductor with a relatively higher number of turns have been compared in order to efficient a size efficient CMOS LNA design method while still retaining the circuit operation characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.1
• /
• pp.59-66
• /
• 2011

In this paper, a co-planar waveguide(CPW)-fed zeroth-order resonant(ZOR) antenna with an improved radiation efficiency was built and tested. The unit cell of the proposed antenna consists of a series metal-insulator-metal(MIM) capacitor and a shorted shunt stub inductor. In order to reduce the antenna size and to achieve the high radiation efficiency two shorted shunt stub arms bent by 90 degree were connected to the ground plane through the via. The proposed antenna consisting of two unit cells has an open ended composite right/left-handed(CRLH) transmission line structure. As a result the dominantly radiating parts of the antenna comes from shunt stub arms and vertical vias. The total size of the fabricated zeroth-order resonant antenna is $0.22\;{\lambda}_0{\times}0.22\;{\lambda}_0$. The measured gain and efficiency of the fabricated antenna have been enhanced by 3.07 dBi and 75 %, respectively, at the zeroth-order resonant frequency of 2.97 GHz.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.4
• /
• pp.196-203
• /
• 2006

An air-gap type FBAR was designed using Leach equivalent model for analyzing a vertical structure of the FBAR. For the top electrode, Pt, and the bottom electrode, Au, of $1.2{\mu}m$ thickness and the piezoelectric of 0.8,urn thickness, the resonance and anti-resonance occurred at 2.401 GHz and 2.460 GHz, respectively. $S_{11}$ was increased and $S_{21}$ was decreased as the resonance area of FBAR was widened. We observed the characteristics of insertion loss, bandwidth and out-of-band rejection of ladder-type FBAR BPF by changing resonance areas of series and shunt resonators and by adding stages. As the resonance area of series resonator was increased, insertion loss was improved but out-of-band rejection was degraded. And as the resonance area of shunt resonator was increased, insertion loss was degraded a little but out-of-band rejection was improved even without adding stages. We, also, changed the shape of the resonance area from square shape to rectangle shape to examine the effects of the resonator shape on the characteristics of the BPF. The best performances were observed when the sizes of series and shunt resonator are $150{\mu}m{\times}l50{\mu}m\;and\;5{\mu}m{\times}50{\mu}m$, respectively. Out-of-band rejection was improved about 10dB and bandwidth was broadened from 30MHz to 100MHz utilizing inductor tuning on $2{\times}2\;and\; 4{\times}2$ ladder-type BPFs.