• 제목/요약/키워드: vertical interface

검색결과 375건 처리시간 0.027초

Analytical solutions for crack initiation on floor-strata interface during mining

  • Zhao, Chongbin
    • Geomechanics and Engineering
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    • 제8권2호
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    • pp.237-255
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    • 2015
  • From the related engineering principles, analytical solutions for horizontal crack initiation and propagation on a coal panel floor-underlying strata interface due to coal panel excavation are derived in this paper. Two important concepts, namely the critical panel width of horizontal crack initiation on the panel floor-underlying strata interface and the critical panel width of vertical fracture (crack) initiation in the panel floor, have been presented. The resulting analytical solution indicates that: (1) the first criterion can be used to express the condition under which horizontal plane cracks (on the panel floor-underlying strata interface or in the panel floor because of delamination) due to the mining induced vertical stress will initiate and propagate; (2) the second criterion can be used to express the condition under which vertical plane cracks (in the panel floor) due to the mining induced horizontal stress will initiate and propagate; (3) this orthogonal set of horizontal and vertical plane cracks, once formed, will provide the necessary weak network for the flow of gas to inrush into the panel. Two characteristic equations are given to quantitatively estimate both the critical panel width of vertical fracture initiation in the panel floor and the critical panel width of horizontal crack initiation on the interface between the panel floor and its underlying strata. The significance of this study is to provide not only some theoretical bases for understanding the fundamental mechanism of a longwall floor gas inrush problem but also a benchmark solution for verifying any numerical methods that are used to deal with this kind of gas inrush problem.

프록시 바인딩 갱신을 이용한 수직적 핸드오버 기법 (A Vertical Handover Scheme Using Proxy Binding Update)

  • 박희동
    • 한국인터넷방송통신학회논문지
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    • 제10권1호
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    • pp.15-20
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    • 2010
  • 본 논문은 멀티 호밍 기반의 프록시 바인딩 갱신 (Proxy binding update)을 이용하여 이동 노드가 다른 종류의 무선 액세스 망으로 이동할 때 발생하는 수직적 핸드오버 (Vertical handover) 지연 및 그에 따른 패킷 손실을 최소화하는 방안을 제안하였다. 제안 방안에서 다중 인터페이스를 가지는 이동 단말이 이종 액세스 망으로 이동할 경우 기존의 인터페이스를 통한 네트워크 연결을 유지한 채 새로운 인터페이스를 이용해 미리 3계층 핸드오버를 수행함으로써 빠르고 끊김 없는 핸드오버가 가능하다. 제안된 프록시 바인딩 갱신이 Mobile IP의 바인딩 갱신과 다른 점은 바인딩 갱신 메시지에 자신의 인터페이스가 아닌 이전 액세스 망과 통신하고 있는 인터페이스의 홈 주소 (Home address)를 사용한다는 점이다. 성능 분석 결과 제안된 수직적 핸드오버 기법이 핸드오버 지연 및 패킷 손실을 효율적으로 감소시킬 수 있음을 확인할 수 있었다.

이종 무선네트워크에서 가상인터페이스기반 수직적 핸드오버 실증 성능 평가 (Experimental Performance Evaluation of Vertical Handover with Virtual Interface in Heterogeneous Mobile Networks)

  • 조일권;윤동근;하상용;최성곤
    • 정보처리학회논문지C
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    • 제19C권2호
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    • pp.127-134
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    • 2012
  • 본 논문에서는 이종 무선네트워크간의 수직적 핸드오버를 할 때 네트워크 접속 물리 인터페이스의 전환에 따른 서비스 단절을 방지하고 3세대 무선네트워크 이동성 관리와 일관성을 유지하여 이동성 관리의 편의를 제공할 수 있는 가상 인터페이스 기반의 Simple IP 에뮬레이션 방법을 제안한다. 제안된 방법의 실증적 실험을 통해 가상 인터페이스의 미적용시와 핸드오버 시간을 비교하여 핸드오버 성능 개선을 확인하였다.

Differential settlements in foundations under embankment load: Theoretical model and experimental verification

  • Wang, Changdan;Zhou, Shunhua;Wang, Binglong;Guo, Peijun;Su, Hui
    • Geomechanics and Engineering
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    • 제8권2호
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    • pp.283-303
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    • 2015
  • To research and analyze the differential settlements of foundations specifically, site investigations of existing railways and metro were firstly carried out. Then, the centrifugal test was used to observe differential settlements in different position between foundations on the basis of investigation. The theoretical model was established according to the stress diffusion method and Fourier method to establish an analytical solution of embankment differential settlement between different foundations. Finally, theoretical values and experimental values were analyzed comparatively. The research results show that both in horizontal and vertical directions, evident differential settlement exists in a limited area on both sides of the vertical interface between different foundations. The foundation with larger elastic modulus can transfer more additional stress and cause relatively less settlement. Differential settlement value decreases as the distance to vertical interface decreases. In the vertical direction of foundation, mass differential settlement also exists on both sides of the vertical interface and foundation with larger elastic modulus can transfer more additional stress. With the increase of relative modulus of different foundations, foundation with lower elastic modulus has larger settlement. Meanwhile, differential settlement is more obvious. The main error sources in theoretical and experimental values include: (a) different load form; (b) foundation characteristics differences; (c) modulus conversion; (d) effect of soil internal friction.

Nonlinear analysis of finite beam resting on Winkler foundation with consideration of beam-soil interface resistance effect

  • Zhang, L.;Zhao, M.H.;Xiao, Y.;Ma, B.H.
    • Structural Engineering and Mechanics
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    • 제38권5호
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    • pp.573-592
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    • 2011
  • Comprehensive and accurate analysis of a finite foundation beam is a challenging engineering problem and an important subject in foundation design. One of the limitation of the traditional Winkler elastic foundation model is that the model neglects the effect of the interface resistance between the beam and the underneath foundation soil. By taking the beam-soil interface resistance into account, a deformation governing differential equation for a finite beam resting on the Winkler elastic foundation is developed. The coupling effect between vertical and horizontal displacements is also considered in the presented method. Using Galerkin method, semi-analytical solutions for vertical and horizontal displacements, axial force, shear force and bending moment of the beam under symmetric loads are presented. The influences of the interface resistance on the behavior of foundation beam are also investigated.

Marginal bone level changes in association with different vertical implant positions: a 3-year retrospective study

  • Kim, Yeon-Tae;Lim, Gyu-Hyung;Lee, Jae-Hong;Jeong, Seong-Nyum
    • Journal of Periodontal and Implant Science
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    • 제47권4호
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    • pp.231-239
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    • 2017
  • Purpose: To retrospectively evaluate the relationship between the vertical position of the implant-abutment interface and marginal bone loss over 3 years using radiological analysis. Methods: In total, 286 implant surfaces of 143 implants from 61 patients were analyzed. Panoramic radiographic images were taken immediately after implant installation and at 6, 12, and 36 months after loading. The implants were classified into 3 groups based on the vertical position of the implant-abutment interface: group A (above bone level), group B (at bone level), and group C (below bone level). The radiographs were analyzed by a single examiner. Results: Changes in marginal bone levels of $0.99{\pm}1.45$, $1.13{\pm}0.91$, and $1.76{\pm}0.78mm$ were observed at 36 months after loading in groups A, B, and C, respectively, and bone loss was significantly greater in group C than in groups A and B. Conclusions: The vertical position of the implant-abutment interface may affect marginal bone level change. Marginal bone loss was significantly greater in cases where the implantabutment interface was positioned below the marginal bone. Further long-term study is required to validate our results.

The Effects of Swiping Orientation on Preference and Willingness to Pay: The Interaction Between Touch Interface and Need-For-Touch

  • Ren, Han;Kang, Hyunmin;Ryu, Soohyun;Han, Kwanghee
    • 감성과학
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    • 제20권4호
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    • pp.65-78
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    • 2017
  • The current study examined the influence of individual trait such as Need-For-Touch level (NFT; high vs. low) and swiping orientation (vertical vs. horizontal) on product evaluation and preference when using touch-screen interface like a smart phone and a tablet. Swiping is one of the most common interaction techniques for changing pages or searching some aligned pictures on touch-screen interface and it can be used in vertical and horizontal orientations. The experiment revealed a significant interaction between swiping orientation and NFT on preference, however the interaction on change-in-price of given products was only marginally significant. To be specific, high NFT participants reported higher preference for horizontal-swipe than vertical-swipe products, but such difference did not occur with low NFT participants. The current study illustrates the influence of swiping orientation and NFT on product preference and it provides a new perspective of design principles especially for online shopping websites.

아스팔트포장의 경계층 영향에 대한 해석적 기초연구 (Fundamental Study on Analysis of the Bonding Effect on Asphalt Pavement)

  • 최준성
    • 한국도로학회논문집
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    • 제7권3호
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    • pp.11-21
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    • 2005
  • 본 연구에서는 기존의 아스팔트 콘크리트 포장구조해석에 사용되는 다층탄성해석에서 경계면의 영향을 평가하기 위해 상용 유한요소해석 프로그램인 ABAQUS와 다층탄성 프로그램인 KENLAYER를 이용하여 연직하중이 작용하는 경우의 경계면 특성에 따른 포장성능에 관한 비교 분석을 실시하였다. 그리고 실제 주행하중에 의해 발생되는 수평하중이 포장체에 미치는 영향을 고찰하기 위해 수평하중을 고려한 포장구조해석도 실시하였다. 이를 위해 ABAQUS를 이용하여 경계면 상태에 따른 포장구조체 내부에서 발생하는 변형률 및 처짐을 분석하고, 경계면의 접합상태에 따른 효과를 분석하였다. 이러한 과정을 통해 경계면 상태에 따른 포장체의 공용성에 관한 기존의 정성적 평가로부터 수치해석을 통해 정량적 평가를 실시하고, 경계면 효과에 대한 기본연구를 실시하였다. 연구 결과 기존 해석에서 사용되는 연직하중만 작용하는 경우와 실제 주행하중을 모사하는 연직하중과 수평하중이 동시에 작용하는 경우 수평하중의 작용으로 인해 공용횟수가 약 1/300로 감소하여 포장구조해석시 수평하중을 고려한 해석이 절실히 필요함을 알 수 있었다.

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2 차원 Si 종형 Hall 소자의 자기감도 개선 (Magnetic Sensitivity Improvement of 2-Dimensional Silicon Vertical Hall Device)

  • 류지구
    • 센서학회지
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    • 제23권6호
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    • pp.392-396
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    • 2014
  • The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

Si 종형 Hall 소자의 자기감도 개선 (Magnetic Sensitivity Improvement of Silicon Vertical Hall Device)

  • 류지구;김남호;정수태
    • 센서학회지
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    • 제20권4호
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    • pp.260-265
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    • 2011
  • The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.